KDV216E

SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio Low Series Resistance CATHODE MARK C 1 KDV216E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 32 125 -55 125 UNIT V D B A F 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Type Name V3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current IR C1V Capacitance C2V C25V C28V C1V/C28V Capacitance Ratio C1V/C2V C25V/C28V Series Resistance rs ) TEST CONDITION VR=32V VR=1V, f=1MHz VR=2V, f=1MHz VR=25V, f=1MHz VR=28V, f=1MHz VR=5V, f=470MHz MIN. 19.0 1.75 9.2 1.2 1.035 TYP. 15.0 2.1 10 1.045 MAX. 10 21.0 2.15 0.7 UNIT nA pF pF pF pF - SYMBOL Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) (VR=1~28V) 0.02 2008. 12. 16 Revision No : 1 1/2 KDV216E CT - V R TOTAL CAPACITANCE CT (pF) 100 rS - VR SERIES RESISTANCE rS (Ω) Ta=25 C f=1MHz 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 Ta=25 C f=470MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) IR - VR REVERSE CURRENT IR (pA) 100 Ta=25 C 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2008. 12. 16 Revision No : 1 2/2