KDV241E

SEMICONDUCTOR TECHNICAL DATA ANTENNA TUNNING APPLICATION FEATURES Low Tuning Voltage : VT=3V. High Capacitance Ratio : C0.5V/C3V=3.5(Min.) Excellent C-V Characteristics, and Small Tracking Error. CATHODE MARK C 1 KDV241E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E 2 D F B A MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 10 125 -55 125 UNIT V 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Type Name TM ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current ) TEST CONDITION VR=25V VR=0.5V, f=1MHz VR=1.5V, f=1MHz VR=3V, f=1MHz VR=0.5V, f=470MHz MIN. 7.2 3.3 1.8 3.5 TYP. MAX. 10 8.9 4.2 2 1.3 pF UNIT nA SYMBOL IR C0.5V Capacitance C1.5V C3V Capacitance Ratio Series Resistance C0.5V/C3V rS 2007. 6. 11 Revision No : 0 1/2 KDV241E I R - Tj 10 REVERSE CURRENT I R (nA) 2 C T - VR 14 TOTAL CAPACITANCE CT (pF) 12 10 8 6 4 2 0 f=1MHz Ta=25 C 10 0 20 40 60 80 100 0 1 REVERSE VOLTAGE VR (V) 10 JUNCTION TEMPERATURE T j ( C) 2007. 6. 11 Revision No : 0 2/2