KDV245

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF Band Radio. KDV245 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 G FEATURES High Capacitance Ratio : C0.5V/C2.5V =2.5(Typ.) Low Series Resistance : rs=0.35 Useful for Small Size Tuner. (Typ.) K A H E 2 D J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 10 150 -55 150 UNIT V M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 1. ANODE 2. CATHODE USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C0.5V C2.5V K rS IR=1 A VR=10V VR=0.5V, f=1MHz VR=2.5V, f=1MHz C0.5V/C2.5V, f=1MHz VR=1V, f=470MHz TEST CONDITION MIN. 10 7.3 2.75 2.4 TYP. 2.5 0.35 MAX. 3 8.4 3.4 UNIT V nA pF Marking Type Name ED 2003. 1. 27 Revision No : 0 F L 1/2 KDV245 C T - VR 30 CAPACITANCE CT (pF) SERIES RESISTANCE r s (Ω) f=1MHz Ta=25 C r s - VR 0.6 0.5 0.4 0.3 0.2 0.1 0 f=470MHz Ta=25 C 10 5 3 1 0 1 2 3 4 5 6 0.1 0.3 0.5 1 3 5 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2003. 1. 27 Revision No : 0 2/2