KDV251M

SEMICONDUCTOR TECHNICAL DATA VCO FOR C/P, CB PLL KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE B FEATURES Low Series Resistance : 0.6 (Max.) High Capacitance Ratio : 1.7(Min.) 2.2(Max.) H M A O MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 12 150 UNIT V J C E E 1 L 2 N DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 _ G 14.00+ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 0.80 M N 0.55 MAX O 0.75 F -55 150 1. ANODE 2. CATHODE 1 2 CLASSIFICATION OF CAPACITANCE RATIO GRADE GRADE NONE A B C D E CAPACITANCE RATIO (C1.6V/C5V) 1.70 1.70 1.80 1.90 2.00 2.10 2.20 1.82 1.92 2.020 2.12 2 3 L E B L K D G TO-92M DIM A D B C D E G H J K P P L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 2.20 A G H 1 Grade Lot No. M 3 Type Name Q3 1. NC 2. ANODE 3. CATHODE 2 1 K SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C1.6V C5V C1.6V/C5V rS VR=1V, f=50MHz TEST CONDITION IR=10 A VR=9V VR=1.6V, f=1MHz VR=5V, f=1MHz MIN. 12 23 11 1.7 TYP. MAX. 200 38 19 2.2 0.6 UNIT V nA pF pF 2002. 6. 25 Revision No : 4 J Marking C N 1/2 KDV251M/S C - VR 100 f=1MHz Q - VR 2k Ta=25 C f=50MHz Ta=25 C CAPACITANCE C (pF) 30 FIGURE OF MERIT Q 50 1k 500 300 10 5 0 2 4 6 8 10 REVERSE VOLTAGE V R (V) 100 0 2 4 6 8 10 REVERSE VOLTAGE V R (V) 2002. 6. 25 Revision No : 4 2/2