KDV258

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) KDV258 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 K G A H F 2 D E J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 15 150 -55 150 1. ANODE 2. CATHODE UNIT V M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance VR IR C1V C4V K rS ) TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN. 15 19.0 8.5 2.0 TYP. MAX. 10 21.0 10.0 0.45 UNIT V nA pF SYMBOL Marking Type Name U6 2001. 6. 11 Revision No : 0 L 1/2 KDV258 I R - VR 1K REVERSE CURRENT I R (pA) Ta=25 C C - VR 100 f=1MHz Ta=25 C 100 CAPACITANCE C (pF) 10 10 0 2 4 6 8 10 12 14 16 1 0 5 10 15 20 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2001. 6. 11 Revision No : 0 2/2