KDV258E

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) CATHODE MARK C 1 KDV258E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 15 150 -55 150 UNIT V D F B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance VR IR C1V C4V K rS ) TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN. 15 19.0 8.5 2.0 TYP. MAX. 10 21.0 pF 10.0 0.45 UNIT V nA SYMBOL Marking Type Name U6 2003. 3. 25 Revision No : 0 1/2 KDV258E I R - VR 1K REVERSE CURRENT I R (pA) Ta=25 C C - VR 100 f=1MHz Ta=25 C CAPACITANCE C (pF) 100 10 10 0 2 4 6 8 10 12 14 16 1 0 5 10 15 20 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2003. 3. 25 Revision No : 0 2/2