KDV262E_03

SEMICONDUCTOR TECHNICAL DATA CATV TUNING. FEATURES Low Series Resistance : rS=0.6 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. KDV262E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio : C2V/C25V=12.5(Typ.) C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR VRM Tj Tstg RATING 34 36 (RL=10k ) 125 -55 125 UNIT V V 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance C(Max.)-C(Min.) C(Min.) (VR=2~25V) SYMBOL VR IR C2V C25V C2V/C25V C25V/C28V rS VR=5V, f=470MHz IR=1 A VR=28V VR=2V, f=1MHz VR=25V, f=1MHz TEST CONDITION MIN. 34 33 2.6 12.0 1.03 TYP. 35.5 2.85 12.5 0.6 MAX. 10 38 3.0 0.8 UNIT V nA pF pF - Note : Available in matched group for capacitance to 2.0%. 0.02 Marking Type Name UQ 2003. 10. 16 Revision No : 1 1/2 KDV262E C V - VR 50 REVERSE CURRENT I R (A) CAPACITANCE CV (pF) f=1MHz Ta=25 C I R - VR 1000p Ta=7 5C 100p 0C Ta=5 C 25 Ta= 10 5 10p 1p 1 0 10 20 30 REVERSE VOLTAGE VR (V) 0.1p 0 8 16 24 32 REVERSE VOLTAGE VR (V) r s - VR C (%) 1.0 SERIES RESISTANCE rs (Ω) 0.8 0.6 0.4 0.2 0 1 3 5 10 30 f=470MHz Ta=25 C C - Ta 3 2 1 0 -1 -2 -40 -20 0 20 40 60 80 f=1MHz VR =2V 10V 20V CAPACITANCE CHANGE RATIO 25V REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta ( C) 2003. 10. 16 Revision No : 1 2/2