KDV269E

SEMICONDUCTOR TECHNICAL DATA CATV TUNING. FEATURES Low Series Resistance : rS=0.75 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. KDV269E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio : C2V/C25V=11.0(Min.) C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 34 125 -55 125 UNIT V 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance C(Max.)-C(Min.) C(Min.) (VR=2~25V) SYMBOL IR C2V C25V C2V/C25V rS VR=5V, f=470MHz TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz MIN. 29 2.5 11.0 TYP. 31.5 2.75 11.5 MAX. 10 34 2.9 0.75 UNIT nA pF pF - Note : Available in matched group for capacitance to 2.0%. 0.02 Marking Type Name UR 2003. 12. 2 Revision No : 2 1/2 KDV269E I R - VR 10 REVERSE CURRENT I R (A) -9 C T - VR 60 TOTAL CAPACITANCE CT (pF) f=1MHz 10 -10 40 10 -11 10 -12 20 10 -13 0 10 20 30 40 0 1 10 REVERSE VOLTAGE VR (V) 50 REVERSE VOLTAGE VR (V) r s - VR 0.8 SERIES RESISTANCE rs (Ω) f=470MHz ∆(LOG CT ) / ∆(LOG VR ) - VR 0 ∆(LOG CT) / ∆(LOG VR) 0.6 -1 0.4 -2 0.2 0 1 10 REVERSE VOLTAGE VR (V) 50 -3 1 10 REVERSE VOLTAGE VR (V) 50 2003. 12. 2 Revision No : 2 2/2