KDV273E_08

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES ・High Capacitance Ratio : C1V/C4V =2.0(Typ.) ・Low Series Resistance : rs=0.39Ω(Typ.) KDV273E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 10 150 -55～150 UNIT V ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance C4V Capacitance Ratio Series Resistance K rS VR=4V, f=1MHz VR=1V, f=470MHz 7.3 1.8 8.0 2.0 0.39 8.7 0.5 Ω SYMBOL VR IR C1V IR=1μ A VR=10V VR=1V, f=1MHz TEST CONDITION MIN. 10 15 TYP. 16 MAX. 10 17 pF UNIT V nA 2008. 3. 24 Revision No : 1 1/2 KDV273E 2008. 3. 24 Revision No : 1 2/2