KDV273UL

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.) KDV273UL VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TENTATIVE C MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 10 150 -55 150 E A UNIT V B DIM MILLIMETERS _ A 1.0 + 0.05 _ B 0.6 + 0.05 0.36 +0.02 C - 0.03 _ D 0.5 + 0.03 _ 0.25 +0.03 E _ G 0.65 + 0.03 H 0.05 H G E H D 1. ANODE 2. CATHODE ULP-2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Reverse Current Capacitance C4V Capacitance Ratio Series Resistance K rS ) TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN. 10 15 7.3 1.8 TYP. 16 8.0 2.0 0.39 MAX. 10 17 pF 8.7 0.5 UNIT V nA SYMBOL VR IR C1V Marking Type Name VB 2007. 5. 16 Revision No : 0 1/2 KDV273UL C T - VR 100 CAPACITANCE C T (pF) f=1MHz Ta=25 C IR - VR 1K Ta=25 C REVERSE CURRENT I R (pA) 100 10 10 1 0 1 2 3 4 5 6 7 8 9 10 1 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2007. 5. 16 Revision No : 0 2/2