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KDV287E

KDV287E

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KDV287E - VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING) - KEC(Korea Elec...

  • 数据手册
  • 价格&库存
KDV287E 数据手册
SEMICONDUCTOR TECHNICAL DATA UHF SHF TUNING. FEATURES Low Series Resistance : rS=1.9 Useful for Small Size Tuner. (Typ.) KDV287E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio : C2V/C25V=7.6(Typ.) Excellent C-V Characteristics, and Small Tracking Error. C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR VRM Tj Tstg RATING 30 35(RL=10k 125 -55 125 ) UNIT V V 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance C(Max.)-C(Min.) C(Min.) (VR=2~25V) VR IR C2V C25V ) TEST CONDITION IR=1 A VR=28V VR=2V, f=1MHz VR=25V, f=1MHz MIN. 30 4.2 0.53 7.3 VR=5V, f=470MHz TYP. 1.9 MAX. 10 5.7 0.68 2.3 UNIT V nA pF pF - SYMBOL C2V/C25V rS Note : Available in matched group for capacitance to 6%. 0.06 Marking Type Name UP 2000. 3. 24 Revision No : 0 1/1
KDV287E 价格&库存

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