KDV302E

SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio Low Series Resistance CATHODE MARK C 1 KDV302E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 32 125 -55 125 UNIT V D F B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Type Name V5 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current IR C1V Capacitance C2V C25V C28V ) TEST CONDITION VR=32V VR=1V, f=1MHz VR=2V, f=1MHz VR=25V, f=1MHz VR=28V, f=1MHz VR=5V, f=470MHz MIN. 56.0 2.45 21.6 1.25 1.07 TYP. 46.0 2.85 22.4 1.08 MAX. 10 62.0 2.80 1.15 UNIT nA pF pF pF pF - SYMBOL C1V/C28V Capacitance Ratio C1V/C2V C25V/C28V Series Resistance rs Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) (VR=1~28V) 0.02 2008. 5. 8 Revision No : 0 1/2 KDV302E CT - V R TOTAL CAPACITANCE CT (pF) 100 1.2 rS - V R SERIES RESISTANCE rS (Ω) Ta=25 C f=1MHz Ta=25 C f=470MHz 1.0 0.8 0.6 0.4 0.2 0.0 10 1 0 5 10 15 20 25 30 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) IR - V R REVERSE CURRENT IR (pA) 100 Ta=25 C 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2008. 5. 8 Revision No : 0 2/2