KDV348E

SEMICONDUCTOR TECHNICAL DATA VCO. FEATURES ・Low Series Resistance : rS=0.50Ω(Max.) ・Small Package. CATHODE MARK C 1 KDV348E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E 2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range Forward Current SYMBOL VR Tj Tstg IF RATING 10 150 -55～150 20 UNIT V ℃ ℃ mA D B A F 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Lot No. VT Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Reverse Voltage Reverse Current SYMBOL VR IR C1V Capacitance C2V C3V C4V Capacitance Ratio Series Resistance C1V/C3V C1V/C4V rS IR=1μ A VR=6V VR=6V, TA=85℃ VR=1V, f=1MHz VR=2V, f=1MHz VR=3V, f=1MHz VR=4V, f=1MHz f=1MHz f=1MHz VR=1V, f=470MHz TEST CONDITION MIN. 10 37 21 14 2.15 TYP. 40 15.8 12.1 2.53 3.3 0.25 MAX. 10 nA 100 44 26 pF 17.6 0.5 Ω UNIT V 2009. 11. 11 Revision No : 1 1/2 KDV348E I R - VR 10 REVERSE CURRENT I R (A) -11 CT - VR 100 90 CAPACITANCE CT (pF) 80 70 60 50 40 30 20 10 0 f=1MHz 10 -12 10 -13 0 4 8 12 16 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) r s - VR 0.4 SERIES RESISTANCE r s (Ω) f=1MHz 0.3 0.2 0.1 0 0.5 1.0 3.0 5.0 10 30 50 REVERSE VOLTAGE VR (V) 2009. 11. 11 Revision No : 1 2/2