KDV350

SEMICONDUCTOR TECHNICAL DATA VCO. KDV350 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK FEATURES Low Series Resistance : rS=0.50 Small Package. (Max.) B 1 K G A H F 2 D E J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 15 150 -55 150 1. ANODE 2. CATHODE UNIT V M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance VR IR C1V C4V K rS ) TEST CONDITION IR=1 A VR=15V VR=1V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz VR=1V, f=470MHz MIN. 15 15.0 5.3 2.8 TYP. MAX. 10 17.5 6.3 0.5 UNIT V nA pF SYMBOL Marking Type Name UK 2001. 6. 11 Revision No : 1 L 1/2 KDV350 I R - VR 10 REVERSE CURRENT I R (A) -11 CR - V 25 CAPACITANCE C (pF) 20 15 10 5 0 f=1MHz 10 -12 10 -13 0 4 8 12 16 10 -1 1.0 REVERSE VOLTAGE VR (V) 10 REVERSE VOLTAGE VR (V) r s - VR 0.4 SERIES RESISTANCE r s (Ω) f=1MHz 0.3 0.2 0.1 0 0.5 1.0 3.0 5.0 10 30 50 REVERSE VOLTAGE VR (V) 2001. 6. 11 Revision No : 1 2/2