KDV355E

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Low Series Resistance : rs=0.6 (Max.) Small Package : ESC. KDV355E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio : C1V/C4V =2.2(Min.) C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 15 150 -55 150 UNIT V 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Type Name VA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current SYMBOL IR1 IR2 C1V C4V C1V/C4V rS VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz TEST CONDITION MIN. 6.40 2.55 2.2 TYP. MAX. 10 100 7.20 2.95 0.6 UNIT nA Capacitance Capacitance Ratio Series Resistance pF 2003. 10. 29 Revision No : 0 1/2 KDV355E I R - VR 10 REVERSE CURRENT I R (A) -9 C T - VR 10 TOTAL CAPACITANCE CT (pF) f=1MHz 8 6 4 2 0 10 10 -10 10 -11 10 -12 0 4 8 12 16 -1 1.0 REVERSE VOLTAGE VR (V) 10 REVERSE VOLTAGE VR (V) r s - VR 0.6 SERIES RESISTANCE rs (Ω) f=470MHz ∆(LOG CT ) / ∆(LOG VR ) - VR 0 ∆(LOG CT) / ∆(LOG VR) 0.5 0.4 0.3 0.2 0.1 0 10 -1 -0.5 -1.0 -1.5 1.0 REVERSE VOLTAGE VR (V) 10 10 -1 1.0 REVERSE VOLTAGE VR (V) 10 2003. 10. 29 Revision No : 0 2/2