KDV804KS

SEMICONDUCTOR TECHNICAL DATA TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. KDV804KS VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE L E B L FEATURES Low Series Resistance : rs=0.3(TYP.). A G DIM A D B C D E G H J K MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 Small Package : SOT-23. 2 3 H 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 15 150 UNIT V N C P P L M N J P K M 3 1. ANODE 1 -55 150 2. ANODE 2 3. CATHODE 2 1 CLASSIFICATION OF CAPACITANCE RATIO GRADE GRADE A B C D E CAPACITANCE(C2V) 42 43 44 45 46 43.5 44.5 45.5 46.5 47.5 pF UNIT SOT-23 Marking Grade Lot No. Type Name T3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C2V C8V C2V/C8V rS C=38pF, f=100MHz TEST CONDITION IR=10 A VR=15V VR=2V, f=1MHz VR=8V, f=1MHz MIN. 15 42 24 1.74 TYP. 0.3 MAX. 50 47.5 28.8 1.85 0.4 UNIT V nA pF 2003. 9. 16 Revision No : 0 1/2 KDV804KS C - VR 100 f=1MHz Q 1k FIGURE OF MERIT Q Ta=25 C - VR CAPACITANCE C (pF) 50 30 500 300 10 100 f=50MHz Ta=25 C 5 1 3 5 10 30 REVERSE VOLTAGE VR (V) 50 1 3 5 10 30 REVERSE VOLTAGE VR (V) 2003. 9. 16 Revision No : 0 2/2