KF10N50FR

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 Qg(typ.)= 19.5nC ・trr(typ) = 170ns @VGS=10V D N A KF10N50PR/FR N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N50PR O C F E G B Q I K M L J H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KF10N50PR VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 130 1.04 150 -55 150 D N N H N O P Q UNIT KF10N50FR 500 30 10 5 25 300 14.7 4.5 41.5 0.33 10* 5* 25* mJ mJ V/ns K 1 2 3 1. GATE 2. DRAIN 3. SOURCE V V TO-220AB A A F KF10N50FR C O B E G DIM MILLIMETERS W W/ L M J R Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.96 62.5 3.0 62.5 /W /W 1 2 3 1. GATE 2. DRAIN 3. SOURCE * : Drain current limited by maximum junction temperature. PIN CONNECTION (KF10N50PR, KF10N50FR) D Q A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 _ 13.0 + 0.5 _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 TO-220IS (1) G S 2008. 11. 19 Revision No : 0 1/7 KF10N50PR/FR ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=500V, VGS=0V VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=5A 500 2 0.6 0.54 10 4 100 0.65 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS