KF10N60P_10

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ・VDSS=600V, ID=10A ・Drain-Source ON Resistance : RDS(ON)(Max)=0.73Ω @VGS=10V ・Qg(typ.)= 29.5nC D N N A KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B Q I K M L J H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 MAXIMUM RATING (Tc=25℃) RATING CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ Derate above 25℃ SYMBOL KF10N60P VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 178 1.43 150 -55～150 10 6 25 400 16.5 4.5 46 0.37 600 ±30 10* 6* 25* A F UNIT KF10N60F V V O 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB A KF10N60F C mJ mJ V/ns W W/℃ ℃ ℃ K O B E G DIM MILLIMETERS Maximum Junction Temperature Storage Temperature Range Thermal Characteristics L M J R D N N H Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.7 62.5 2.7 62.5 ℃/W ℃/W 1 2 3 Q * : Drain current limited by maximum junction temperature. 1. GATE 2. DRAIN 3. SOURCE A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 _ 13.0 + 0.5 _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 PIN CONNECTION (KF10N60P, KF10N60F) D TO-220IS (1) G S 2010. 8. 16 Revision No : 0 1/7 KF10N60P/F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250μ VGS=0V A, ID=250μ Referenced to 25℃ A, VDS=600V, VGS=0V VDS=VGS, ID=250μ A VGS=±30V, VDS=0V VGS=10V, ID=5A 600 2.5 0.6 0.59 10 4.5 ±100 0.73 V V/℃ μ A V nA Ω Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance IDSS Vth IGSS RDS(ON) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS