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KF12N60F

KF12N60F

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KF12N60F - N CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC(Korea Electronics)

  • 数据手册
  • 价格&库存
KF12N60F 数据手册
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ・VDSS=600V, ID=12A ・Drain-Source ON Resistance : RDS(ON)=0.6Ω(Max) @VGS=10V ・Qg(typ.)= 36nC KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF12N60P MAXIMUM RATING (Tc=25℃) RATING CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ Derate above 25℃ SYMBOL KF12N60P VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 215 1.72 150 -55~150 12 7.4 33 450 17 4.5 49.8 0.4 600 ±30 12* 7.4* 33* mJ mJ V/ns W W/℃ ℃ ℃ A KF12N60F UNIT KF12N60F V V Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.58 62.5 2.51 62.5 ℃/W ℃/W * : Drain current limited by maximum junction temperature. EQUIVALENT CIRCUIT 2010. 8. 12 Revision No : 3 1/7 KF12N60P/F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS ΔBVDSS/ΔTj IDSS Vth IGSS RDS(ON) ID=250μ VGS=0V A, ID=250μ Referenced to 25℃ A, VDS=600V, VGS=0V VDS=VGS, ID=250μ A VGS=±30V, VDS=0V VGS=10V, ID=6A 600 2.5 0.63 0.51 10 4.5 ±100 0.6 V V/℃ μ A V nA Ω Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS
KF12N60F 价格&库存

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