KF3N60I

SEMICONDUCTOR TECHNICAL DATA General Description KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF3N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ・VDSS= 600V, ID= 2.3A ・Drain-Source ON Resistance : RDS(ON)=3.3Ω @VGS = 10V ・Qg(typ) = 8.5nC H G F A C K D L B J E N F M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.50 + 0.10 L _ M 0.50 + 0.10 0.70 MIN N MAXIMUM RATING (Ta=25℃) 1 2 3 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ Derate above 25℃ SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 600 ±30 2.3 1.46 7* 120 3.2 4.5 73 0.58 150 -55～150 UNIT V V 1. GATE 2. DRAIN 3. SOURCE DPAK (1) A KF3N60I mJ mJ A C D H J DIM A B C D E MILLIMETERS _ 6.6 + 0.2 _ 6.1 + 0.2 _ 5.34 + 0.3 _ 0.7 + 0.2 _ 9.3 +0.3 _ 2.3 + 0.2 _ 0.76 + 0.1 _ 2.3 + 0.1 _ 0.5+ 0.1 _ 1.8 + 0.2 _ 0.5 + 0.1 _ 1.0 + 0.1 0.96 MAX _ 1.02 + 0.3 V/ns K W W/℃ ℃ ℃ M N B F P E G H J K L Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient G F F L M N P RthJC RthJA 2.8 62.5 ℃/W ℃/W 1 2 3 1. GATE 2. DRAIN 3. SOURCE * : Drain current limited by maximum junction temperature. PIN CONNECTION IPAK(1) D G S 2010. 12. 20 Revision No : 0 1/6 KF3N60D/I ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250㎂ , VGS=0V ID=250㎂, Referenced to 25℃ VDS=600V, VGS=0V, VDS=VGS, ID=250㎂ VGS=±30V, VDS=0V VGS=10V, ID=1.15A 600 2.5 0.61 2.8 10 4.5 ±100 3.3 V V/℃ ㎂ V nA Ω Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance IDSS Vth IGSS RDS(ON) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS