KF4N20LI

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES ・VDSS(Min.)= 200V, ID= 3.6A ・Drain-Source ON Resistance : RDS(ON)=1.05 Ω(max) @VGS =10V ・Qg(typ.) =2.9nC ・Vth(Max.)= 2V H G F F KF4N20LD/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF4N20LD A C K D L B J E N M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.10 0.50 + L _ M 0.50 + 0.10 0.70 MIN N MAXIMUM RATING (Tc=25℃) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25℃ Derate above25℃ SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 200 ±20 3.6 2.2 7* 52 3 5.5 31 0.25 150 -55～150 mJ mJ V/ns W W/℃ ℃ ℃ G 1 2 3 1. ANODE 2. CATHODE 3. ANODE UNIT V V DPAK (1) A KF4N20LI A C H J B D DIM A B MILLIMETERS K M N _ 6.6 + 0.2 _ 6.1 + 0.2 _ 5.34 + 0.3 _ 0.7 + 0.2 _ 9.3 +0.3 _ 2.3 + 0.2 _ 0.76 + 0.1 _ 2.3 + 0.1 _ 0.5 + 0.1 _ 1.8 + 0.2 _ 0.5 + 0.1 _ 1.0 + 0.1 0.96 MAX _ 1.02 + 0.3 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient P C D E F G H E RthJC RthJA 4.0 110 ℃/W ℃/W 1 F F L J K L M 2 3 N P * : Drain current limited by maximum junction temperature. 1. ANODE 2. CATHODE 3. ANODE PIN CONNECTION IPAK(1) 2010. 8. 20 Revision No : 0 1/6 KF4N20LD/I ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS ΔBVDSS/ΔTj IDSS Vth IGSS RDS(ON) ID=250μ VGS=0V A, ID=250μ Referenced to 25℃ A, VDS=200V, VGS=0V, VDS=VGS, ID=250μ A VGS=±20V, VDS=0V VGS=10V, ID=1.8A VGS=5V, ID=1.8A 200 1.0 0.2 0.85 0.89 10 2.0 ±100 1.05 1.10 Ω V V/℃ μ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS