KF5N60D

SEMICONDUCTOR TECHNICAL DATA General Description KF5N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF5N60D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ・VDSS= 600V, ID= 3.5A ・Drain-Source ON Resistance : RDS(ON)=2.0Ω(Max) @VGS = 10V ・Qg(typ) = 11nC H G F A C K D L B J E N F M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.50 + 0.10 L _ M 0.50 + 0.10 0.70 MIN N 1 2 3 MAXIMUM RATING (Tc=25℃) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ Derate above 25℃ SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 600 ±30 3.5 2.2 13 A 1. GATE 2. DRAIN 3. SOURCE UNIT V V DPAK (1) A KF5N60I mJ mJ B 140 3.5 4.5 59.5 0.48 150 -55～150 H J D C DIM A B MILLIMETERS V/ns K M _ 6.6 + 0.2 _ 6.1 + 0.2 _ 5.34 + 0.3 _ 0.7 + 0.2 _ 9.3 +0.3 _ 2.3 + 0.2 _ 0.76 + 0.1 _ 2.3 + 0.1 _ 0.5+ 0.1 _ 1.8 + 0.2 _ 0.5 + 0.1 _ 1.0 + 0.1 0.96 MAX _ 1.02 + 0.3 W N P E C D E F G W/℃ ℃ ℃ G F F Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient H L J K L M RthJC RthJA 2.1 110 ℃/W ℃/W 1 2 3 1. GATE 2. DRAIN 3. SOURCE N P PIN CONNECTION IPAK(1) D G S 2011. 1. 26 Revision No : 0 1/6 KF5N60D/I ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS ΔBVDSS/ΔTj IDSS Vth IGSS RDS(ON) ID=250㎂ , VGS=0V ID=250㎂, Referenced to 25℃ VDS=600V, VGS=0V, VDS=VGS, ID=250㎂ VGS=±30V, VDS=0V VGS=10V, ID=1.75A 600 2.5 0.61 1.7 10 4.5 ±100 2.0 V V/℃ ㎂ V nA Ω Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS