KF7N60F-U/PS

SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B FEATURES 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + B Q C I D E ・VDSS=600V, ID=7A K P ・Drain-Source ON Resistance : M F G L H RDS(ON)(Max)=1.2Ω @VGS=10V J ・Qg(typ.)= 19nC I D J N H N MAXIMUM RATING (Tc=25℃) K 1.46 L _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + M N RATING O SYMBOL UNIT KF7N60P KF7N60F Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Power Dissipation 4* 20 20* IDP TO-220AB A KF7N60F C A 210 mJ EAR 11 mJ O EAS dv/dt Tc=25℃ 4.5 E V/ns 108 41 W 0.87 0.33 W/℃ PD Derate above 25℃ Tj 150 ℃ Tstg -55～150 ℃ L M R J Maximum Junction Temperature Q F Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 4 P 1. GATE 2. DRAIN 3. SOURCE ID @TC=100℃ Pulsed (Note1) 7* 3 G Drain Current 7 2 Storage Temperature Range D Thermal Characteristics N RthJC 1.15 3.05 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 62.5 ℃/W Q Thermal Resistance, Junction-to-Case DIM MILLIMETERS A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + B @TC=25℃ 1 K CHARACTERISTIC 1 N 2 H 1. GATE 2. DRAIN 3. SOURCE 3 _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + * : Drain current limited by maximum junction temperature. *Single Gauge Lead Frame TO-220IS (1) PIN CONNECTION D G S 2013. 5. 03 Revision No : 1 1/7 KF7N60P/F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 600 - - V ID=250μA, Referenced to 25℃ - 0.65 - V/℃ Static BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=3.5A - 0.95 1.2 Ω - 19 - - 4.4 - - 7 - - 22 - - 25 - - 57 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time VDS=480V, ID=7A VGS=10V (Note4,5) VDD=300V ID=7A td(off) Turn-off Delay time RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 24 - Input Capacitance Ciss - 900 - Output Capacitance Coss - 100 - Reverse Transfer Capacitance Crss - 7.5 - - - 7 - - 28 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings IS Continuous Source Current VGS