KGF25N120KDA

SEMICONDUCTOR KGF25N120KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ・High speed switching ・High ruggedness, temperature stable behavior ・Short Circuit Withstand Times ≻10us ・Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V 50 A 25 A ICM* 75 A IF 25 A IFM 75 A 227 W 91 W Tj 150 ℃ Tstg -55 to + 150 ℃ @Tc=25℃ Collector Current @Tc=100℃ Pulsed Collector Current Diode Continuous Forward Current @Tc=100℃ Diode Maximum Forward Current Maximum Power Dissipation @Tc=25℃ @Tc=100℃ Maximum Junction Temperature Storage Temperature Range IC PD *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.55 ℃/W Thermal Resistance, Junction to Case (DIODE) Rt h JC 1.7 ℃/W Thermal Resistance, Junction to Ambient Rt h JA 40 ℃/W 2013. 9. 30 Revision No : 0 E C G 1/8 KGF25N120KDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES TEST CONDITION MIN. TYP. MAX. UNIT 1200 - - V Static VGE=0V , IC=1mA Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA VGE(th) VGE=VCE, IC=25mA 4.5 5.5 7.0 V VGE=15V, IC=25A - 2.0 2.4 V VGE=15V, IC=25A, TC = 125℃ - 2.25 - V VGE=15V, IC=50A - 2.6 - V - 160 - nC - 25 - nC Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE(sat) Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 80 - nC Turn-On Delay Time td(on) - 40 - ns tr - 25 - ns - 175 - ns - 85 - ns Rise Time Turn-Off Delay Time Fall Time VCC=600V, VGE=15V, IC= 25A td(off) tf VCC=600V, IC=25A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ Turn-On Switching Loss Eon - 1.85 2.4 mJ Turn-Off Switching Loss Eoff - 0.9 1.2 mJ Total Switching Loss Ets - 2.75 3.6 mJ Turn-On Delay Time td(on) - 40 - ns tr - 30 - ns - 180 - ns - 190 - ns Rise Time Turn-Off Delay Time Fall Time td(off) tf VCC=600V, IC=25A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ Turn-On Switching Loss Eon - 2.0 - mJ Turn-Off Switching Loss Eoff - 1.6 - mJ Total Switching Loss Ets - 3.6 - mJ Input Capacitance Cies - 2650 3450 pF Ouput Capacitance Coes - 115 - pF Reverse Transfer Capacitance Cres - 70 - pF Short Circuit Withstand Time tsc 10 - - μs VCE=30V, VGE=0V, f=1MHz VCC=600V, VGE=15V, TC=100℃ Marking 2013. 9. 30 Revision No : 0 2/8 KGF25N120KDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage MIN. TYP. MAX. TC=25℃ - 2.4 3.0 TC=125℃ - 2.5 - TC=25℃ - 140 - TC=125℃ - 180 - IF = 25A TC=25℃ - 13.5 - di/dt = 200A/μs TC=125℃ - 16.0 - TC=25℃ - 1.05 - TC=125℃ - 1.65 - IF = 25A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 2013. 9. 30 TEST CONDITION Irr V ns A Qrr Revision No : 0 UNIT C 3/8 KGF25N120KDA 2013. 9. 30 Revision No : 0 4/8 KGF25N120KDA 2013. 9. 30 Revision No : 0 5/8 KGF25N120KDA 2013. 9. 30 Revision No : 0 6/8 KGF25N120KDA 2013. 9. 30 Revision No : 0 7/8 KGF25N120KDA 2013. 9. 30 Revision No : 0 8/8