KGH25N120NDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. FEATURES ・High speed switching ・Higher system efficiency ・Soft current turn-off waveforms ・Square RBSOA using NPT technology D E H KGH25N120NDA A N O Q B K d M P P T 1 2 3 1. GATE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS _ A 15.60 + 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 + 0.20 _ d 1.00 + 0.20 _ E 3.00 + 0.20 _ 3.80 + 0.20 F _ G 3.50 + 0.20 _ H 13.90 + 0.20 _ I 12.76 + 0.20 _ J 23.40 + 0.20 K 1.5+0.15-0.05 _ L 16.50 + 0.30 _ M 1.40 + 0.20 _ 13.60 + 0.20 N _ 9.60 + 0.20 O _ P 5.45 + 0.30 _ Q 3.20 + 0.10 _ R 18.70 + 0.20 0.60+0.15-0.05 T F C J I G MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range @TC=25 @TC=100 Tj Tstg @TC=25 @TC=100 ICM* IF IFM PD SYMBOL VCES VGES IC RATING 1200 ±20 40 25 75 25 110 300 120 150 -55 to + 150 UNIT V V A A A A A W W ℃ ℃ G TO-3P(N)-E C L R E *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) SYMBOL Rθ JC Rθ JC MAX. 0.4 1.2 UNIT ℃/W ℃/W 2009. 2. 19 Revision No : 2 1/6 KGH25N120NDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage Collector-Emitter Saturation Voltage Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres VCE=30V, VGE=0V, f=1MHz VCC=600V, IC=25A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ VCC=600V, IC=25A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ VCC=600V, VGE=15V, IC= 25A 200 20 100 60 50 190 70 4.8 1.0 5.8 60 50 200 100 4.9 1.4 6.3 2400 200 100 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF BVCES ICES IGES VGE(th) VCE(sat) VGE=0V , IC=3mA VGE=0V, VCE=1200V VCE=0V, VGE=±20V VGE=VCE, IC=25mA VGE=15V, IC=25A 1200 3.5 5.5 2.2 3 ±100 7.5 2.5 V mA nA V V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage SYMBOL VF IF = 25A TEST CONDITION TC=25 TC=125 Diode Reverse Recovery Time trr IF = 25A di/dt = 200A/μ s Diode Peak Reverse Recovery Current Irr TC=25 TC=125 TC=25 TC=125 MIN. TYP. 1.8 1.9 230 300 27 31 MAX. 2.2 V 330 ns 35 A UNIT 2009. 2. 19 Revision No : 2 2/6 KGH25N120NDA Fig 1. Typical Output Characteristics 180 TC=25 C 20V 17V Fig 2. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V 100 T = 25 C C TC = 125 C Collector Current IC (A) 140 120 100 80 60 40 20 0 0 2 4 6 8 10 VGE = 10V Collector Current IC (A) 160 15V 12V 80 60 40 20 0 0 2 4 6 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Collector - Emitter Voltage VCE (V) Common Emitter VGE = 15V Fig 4. Saturation Voltage vs. VGE Collector - Emitter Voltage VCE (V) 20 Common Emitter TC = 25 C 4.0 3.5 16 12 8 4 0 0 4 40A 25A IC = 12.5A 40A 3.0 IC = 25A 2.5 2.0 25 50 75 100 125 8 12 16 20 Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V) Fig 5. Saturation Voltage vs. VGE Collector - Emitter Voltage VCE (V) 20 Common Emitter TC = 125 C Fig 6. Capacitance Characteristics 4000 3500 3000 Ciss Common Emitter VGE = 0V, f = 1MHZ TC = 25 C 16 Capacitance (pF) 12 8 4 0 0 4 40A 25A IC = 12.5A 2500 Coss 2000 1500 1000 500 Crss 8 12 16 20 0 1 10 Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V) 2009. 2. 19 Revision No : 2 3/6 KGH25N120NDA Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance Common Emitter 1000 VCC = 600V, VGE = 15V Switching Time (ns) Switching Time (ns) 100 td(on) IC = 15A TC = 25 C TC = 125 C td(off) tr Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C 100 tf 10 0 10 20 30 10 70 0 10 20 30 40 50 60 70 40 50 60 Gate Resistance RG (Ω) Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C Fig 10. Turn-On Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C Switching Loss (mJ) 10 Switching Time (ns) tr Eon 100 td(on) Eoff 1 0 10 20 30 40 50 60 70 0 20 30 40 50 Gate Resistance RG (Ω) Collector Current IC (Α) Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C Eon Switching Loss (mJ) Switching Time (ns) td(off) 10 Eoff 100 tf Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 1 0.1 0 20 30 40 50 0 20 30 40 50 Collector Current IC (Α) Collector Current IC (Α) 2009. 2. 19 Revision No : 2 4/6 KGH25N120NDA Fig 13. Gate Charge Characteristics 16 Fig 14. SOA Characteristics 100 IC MAX (Pulsed) 50µs Gate-Emitter Voitage VGE (V) 14 12 10 8 6 4 2 0 0 600V 400V Collector Current IC (A) Common Emitter RL = 24Ω TC = 25 C IC MAX (Continuous) 10 100µs 1 Single nonrepetitive pulse 1ms Vcc = 200V 0.1 Tc= 25 C 0.01 DC Curves must be derated linearly with increase in temperature 20 40 60 80 100 120 140 160 180 200 220 0.1 1 10 100 1000 Gate Charge Qg (nC) Collector-Emitter Voltage VCE (V) Fig 15. Turn-Off SOA 100 Collector Current IC (A) 10 Safe Operating Area VGE = 15V, TC = 125 C 1 1 10 100 1000 Collector-Emitter Voltage VCE (V) Fig 16. Transient Thermal Impedance of IGBT 10 Thermal Resistance (Zthjc) 1 0.5 0.1 0.2 0.1 0.05 PDM t1 t2 Single Pluse 0.01 0.02 0.01 1E-3 1E-5 1. Duty factor D=t1/t2 2. Peak Tj = Pdm Zthjc + TC 1E-3 0.01 0.1 1 10 1E-4 Rectangular Pulse Duration (sec) 2009. 2. 19 Revision No : 2 5/6 KGH25N120NDA Fig 17. Forward Characteristics Reverse Recovery Current IRRM (A) 50 TC = 25 C TC = 125 C Fig 18. Reverse Recovery Current 30 25 20 15 10 5 0 0 5 10 15 20 25 di/dt=200A/µs Forward Current IF (A) 10 di/dt=100A/µs 1 TC = 125 C TC = 25 C 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage VF (V) Forward Current IF (A) Fig 19. Reverse Recovery Time 400 Reverse Recovery Time trr (ns) 300 di/dt=100A/µs 200 di/dt=200A/µs 100 0 0 5 10 15 20 25 Forward Current IF (A) 2009. 2. 19 Revision No : 2 6/6