KGT15N120KDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ・High speed switching ・High system efficiency ・Short Circuit Withstand Times ≻10us ・Extremely enhanced avalanche capability KGT15N120KDA MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current @TC=100℃ Diode Maximum Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range @TC=25℃ @TC=100℃ @TC=25℃ @TC=100℃ SYMBOL VCES VGES IC ICM* IF IFM PD Tj Tstg RATING 1200 ±20 30 15 45 15 45 200 80 150 -55 to + 150 UNIT V V A A A A A W W ℃ ℃ *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.6 2.8 40 UNIT G C E ℃/W ℃/W ℃/W 2011. 5. 25 Revision No : 0 1/8 KGT15N120KDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage BVCES ICES IGES VGE(th) VGE=0V , IC=1.0mA VGE=0V, VCE=1200V VCE=0V, VGE=±20V VGE=VCE, IC=15mA VGE=15V, IC=15A Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=15A, TC = 125℃ VGE=15V, IC=30A Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Short Circuit Withstand Time Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres tsc VCC=600V, VGE=15V, TC=100℃ VCE=30V, VGE=0V, f=1MHz VCC=600V, IC=15A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ VCC=600V, IC=15A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ VCC=600V, VGE=15V, IC= 15A 10 115 13 40 50 30 260 100 2.7 0.55 3.25 50 30 270 150 2.9 0.8 3.7 1900 80 55 170 180 4.0 0.90 4.90 4.2 1.2 5.4 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF μ s 1200 4.0 5.5 1.90 2.25 2.35 1.0 ±100 7.0 2.30 V mA nA V V V V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Marking 2011. 5. 25 Revision No : 0 2/8 KGT15N120KDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage SYMBOL VF IF = 15A TEST CONDITION TC=25℃ TC=125℃ TC=25℃ TC=125℃ IF = 15A di/dt = 200A/μ s TC=25℃ TC=125℃ TC=25℃ TC=125℃ MIN. TYP. 1.8 1.9 230 270 24 27 2400 3640 MAX. 2.5 V 300 ns 31 A 4000 nC UNIT Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr 2011. 5. 25 Revision No : 0 3/8 KGT15N120KDA Typical Performance Characteristics 2011. 5. 25 Revision No : 0 4/8 KGT15N120KDA Typical Performance Characteristics (Continued) 2011. 5. 25 Revision No : 0 5/8 KGT15N120KDA Typical Performance Characteristics (Continued) 2011. 5. 25 Revision No : 0 6/8 KGT15N120KDA Typical Performance Characteristics 2011. 5. 25 Revision No : 0 7/8 KGT15N120KDA Definition Switching Time & Loss. 2011. 5. 25 Revision No : 0 8/8