KGT15N120NDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ・High speed switching ・High system efficiency ・Soft current turn-off waveforms ・Extremely enhanced avalanche capability D E H KGT15N120NDA A N O Q B K d M P P T 1 2 3 1. GATE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS _ A 15.60 + 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 + 0.20 _ d 1.00 + 0.20 _ E 3.00 + 0.20 _ 3.80 + 0.20 F _ G 3.50 + 0.20 _ H 13.90 + 0.20 _ I 12.76 + 0.20 _ J 23.40 + 0.20 K 1.5+0.15-0.05 _ L 16.50 + 0.30 _ M 1.40 + 0.20 _ 13.60 + 0.20 N _ 9.60 + 0.20 O _ P 5.45 + 0.30 _ Q 3.20 + 0.10 _ R 18.70 + 0.20 0.60+0.15-0.05 T F C J I G MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range @TC=25 @TC=100 Tj Tstg @TC=25 @TC=100 ICM* IF IFM PD SYMBOL VCES VGES IC RATING 1200 ±20 30 15 45 15 45 200 80 150 -55 to + 150 UNIT V V A A A A A W W ℃ ℃ TO-3P(N)-E L R C G E *Repetitive rating : Pulse width limited by max. junction temperature C E G THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rθ JC Rθ JC Rθ JA MAX. 0.6 2.8 40 UNIT ℃/W ℃/W ℃/W 2009. 11. 11 Revision No : 0 1/8 KGT15N120NDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage BVCES ICES IGES VGE(th) VGE=0V , IC=1.0mA VGE=0V, VCE=1200V VCE=0V, VGE=±20V VGE=VCE, IC=15mA VGE=15V, IC=15A Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=15A, TC = 125℃ VGE=15V, IC=30A Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres VCE=30V, VGE=0V, f=1MHz VCC=600V, IC=15A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ VCC=600V, IC=15A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ VCC=600V, VGE=15V, IC= 15A 115 13 40 50 30 260 100 2.7 0.55 3.25 50 30 270 150 2.9 0.8 3.7 1900 80 55 170 180 4.0 0.90 4.90 4.2 1.2 5.4 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF 1200 4.0 5.5 1.90 2.25 2.35 1.0 ±100 7.0 2.30 V mA nA V V V V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 2009. 11. 11 Revision No : 0 2/8 KGT15N120NDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage SYMBOL VF IF = 15A TEST CONDITION TC=25 TC=125 Diode Reverse Recovery Time trr IF = 15A di/dt = 200A/μ s TC=25 TC=125 Diode Peak Reverse Recovery Current Irr TC=25 TC=125 TC=25 TC=125 MIN. TYP. 1.8 1.9 230 270 24 27 2400 3640 MAX. 2.5 V 300 ns 31 A 4000 nC UNIT Diode Reverse Recovery Charge Qrr 2009. 11. 11 Revision No : 0 3/8 KGT15N120NDA Typical Performance Characteristics Fig 1. Saturation Voltage Characteristics 180 20V Fig 2. Saturation Voltage Characteristics 80 Common Emitter Collector Current IC (A) 140 120 100 80 60 40 20 0 0 2 16V 12V Collector Current IC (A) 160 ← 15V 70 VGE = 15V 60 T = 125 C C 50 40 30 20 10 0 0 1 2 3 4 5 6 TC = 25 C 10V Common Emitter TC=25 C 4 6 8 10 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Fig 3. Saturation Voltage vs. Case Temperature Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) 3.5 Common Emitter VGE = 15V Fig 4. Saturation Voltage vs. VGE 16 Common Emitter TC = 25 C 3.0 IC = 30A 12 2.5 8 2.0 IC = 15A 4 15A IC = 7.5A 30A 1.5 25 50 75 100 125 0 0 4 8 12 16 20 Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V) Fig 5. Saturation Voltage vs. VGE Collector - Emitter Voltage VCE (V) 16 Common Emitter TC = 125 C Fig 6. Capacitance Characteristics 3500 3000 Ciss Common Emitter VGE = 0V, f = 1MHZ T = 25 C C 12 Capacitance (pF) 2500 2000 1500 Crss Coss 8 4 30A 15A 1000 500 0 0 4 8 IC = 7.5A 12 16 20 0 1 10 40 Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V) 2009. 11. 11 Revision No : 0 4/8 KGT15N120NDA Typical Performance Characteristics (Continued) Fig 7. Turn-On Characteristics vs. Gate Resistance 100 Fig 8. Turn-Off Characteristics vs. Gate Resistance 1000 Switching Time (ns) Switching Time (ns) td(on) td(off) 100 tr tf Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 60 70 10 0 10 20 30 40 50 60 70 Gate Resistance RG (Ω) Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance 10 E(on) Fig 10. Turn-On Characteristics vs. Collector Current 100 Switching Loss (mJ) Switching Time (ns) td(on) 1 E(off) 0.1 0 10 20 30 Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C tr 10 0 10 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 40 50 60 70 20 30 Gate Resistance RG (Ω) Collector Current IC (Α) Fig 11. Turn-Off Characteristics vs. Collector Current 1000 Fig 12. Switching Loss vs. Collector Current 10.0 Switching Loss (mJ) Switching Time (ns) E(on) tf td(off) 100 1.0 10 5 10 15 20 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C E(off) Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 0.1 0 10 15 20 25 30 25 30 Collector Current IC (Α) Collector Current IC (Α) 2009. 11. 11 Revision No : 0 5/8 KGT15N120NDA 2009. 11. 11 6/8