KGT15N120NDS

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ・High speed switching ・High system efficiency ・Soft current turn-off waveforms ・Extremely enhanced avalanche capability KGT15N120NDS MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current @TC=100℃ Diode Maximum Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range @TC=25℃ @TC=100℃ @TC=25℃ @TC=100℃ SYMBOL VCES VGES IC ICM* IF IFM PD Tj Tstg RATING 1200 ±20 30 15 45 15 45 176 70 150 -55 to + 150 UNIT V V A A A A A W W ℃ ℃ E C G *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.92 2.8 40 UNIT ℃/W ℃/W ℃/W 2011. 8. 10 Revision No : 0 1/7 KGT15N120NDS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage BVCES ICES IGES VGE(th) VGE=0V , IC=1.0mA VGE=0V, VCE=1200V VCE=0V, VGE=±20V VGE=VCE, IC=15mA VGE=15V, IC=15A Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=15A, TC = 125℃ VGE=15V, IC=30A Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres VCE=30V, VGE=0V, f=1MHz VCC=600V, IC=15A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ VCC=600V, IC=15A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ VCC=600V, VGE=15V, IC= 15A 70 9 40 30 30 120 150 2.2 0.8 3.1 35 35 160 200 2.5 1.5 4.0 1100 50 30 100 200 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF 1200 4.5 6.0 1.98 2.40 2.87 1.0 ±100 7.5 2.5 V mA nA V V V V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Marking 2011. 8. 10 Revision No : 0 2/7 KGT15N120NDS ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage SYMBOL VF IF = 15A TEST CONDITION TC=25℃ TC=125℃ TC=25℃ TC=125℃ IF = 15A di/dt = 200A/μ s TC=25℃ TC=125℃ TC=25℃ TC=125℃ MIN. TYP. 2.0 2.3 300 410 17 18 2100 3200 MAX. 2.5 V ns 25 A 4000 nC UNIT Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr 2011. 8. 10 Revision No : 0 3/7 KGT15N120NDS 2011. 8. 10 Revision No : 0 4/7 KGT15N120NDS 2011. 8. 10 Revision No : 0 5/7 KGT15N120NDS 2011. 8. 10 Revision No : 0 6/7 KGT15N120NDS 2011. 8. 10 Revision No : 0 7/7