KGT25N120NDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. H KGT25N120NDA A N O Q B K FEATURES ・High speed switching ・High system efficiency ・Soft current turn-off waveforms ・Extremely enhanced avalanche capability D E L d M P P T 1 2 3 1. GATE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS _ A 15.60 + 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 + 0.20 _ d 1.00 + 0.20 _ E 3.00 + 0.20 _ 3.80 + 0.20 F _ G 3.50 + 0.20 _ H 13.90 + 0.20 _ I 12.76 + 0.20 _ J 23.40 + 0.20 K 1.5+0.15-0.05 _ L 16.50 + 0.30 _ M 1.40 + 0.20 _ 13.60 + 0.20 N _ 9.60 + 0.20 O _ P 5.45 + 0.30 _ Q 3.20 + 0.10 _ R 18.70 + 0.20 0.60+0.15-0.05 T F C J I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range @Tc=25℃ @Tc=100℃ @Tc=100℃ @Tc=25℃ @Tc=100℃ SYMBOL VCES VGES IC ICM* IF IFM PD Tj Tstg RATING 1200 ±20 50 25 90 25 150 310 125 150 -55 to + 150 UNIT V V A A TO-3P(N)-E G R C G A A A W W ℃ ℃ E C E *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rθ JC Rθ JC Rθ JA MAX. 0.4 2.8 40 UNIT ℃/W ℃/W ℃/W G 2009. 10. 29 Revision No : 0 1/8 KGT25N120NDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage BVCES ICES IGES VGE(th) VGE=0V , IC=1mA VGE=0V, VCE=1200V VCE=0V, VGE=±20V VGE=VCE, IC=25mA VGE=15V, IC=25A Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=25A, TC = 125℃ VGE=15V, IC=50A Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres VCE=30V, VGE=0V, f=1MHz VCC=600V, IC=25A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ VCC=600V, IC=25A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ VCC=600V, VGE=15V, IC= 25A 200 20 80 60 50 290 100 4.1 0.86 4.96 60 50 300 150 4.3 1.2 5.5 3100 100 80 300 6.1 1.4 7.5 6.3 2.1 8.4 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF 1200 4.0 5.5 1.95 2.25 2.50 1.0 ±100 7.0 2.30 V mA nA V V V V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 2009. 10. 29 Revision No : 0 2/8 KGT25N120NDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage SYMBOL VF IF = 25A TEST CONDITION TC=25 TC=125 Diode Reverse Recovery Time trr IF = 25A di/dt = 200A/μ s TC=25 TC=125 Diode Peak Reverse Recovery Current Irr TC=25 TC=125 TC=25 TC=125 MIN. TYP. 1.8 1.9 230 300 27 31 3100 4650 MAX. 2.5 V 330 ns 35 A 4700 nC UNIT Diode Reverse Recovery Charge Qrr 2009. 10. 29 Revision No : 0 3/8 KGT25N120NDA Typical Performance Characteristics Fig 1. Saturation Voltage Characteristics 180 20V Fig 2. Saturation Voltage Characteristics 100 Common Emitter VGE = 15V 80 TC = 25 C TC = 125 C Collector Current IC (A) 140 120 100 80 60 40 20 0 0 2 15V ← Collector Current IC (A) 160 12V 10V 60 40 20 0 0 1 2 3 4 5 8V Common Emitter TC=25 C 4 6 8 10 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Fig 3. Saturation Voltage vs. Case Temperature Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) 3.0 Common Emitter VGE = 15V Fig 4. Saturation Voltage vs. VGE 20 Common Emitter TC = 25 C 16 12 8 4 0 0 4 40A 25A IC = 12.5A 2.5 40A 2.0 IC = 25A 1.5 25 50 75 100 125 8 12 16 20 Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V) Fig 5. Saturation Voltage vs. VGE Collector - Emitter Voltage VCE (V) 20 Common Emitter TC = 125 C Fig 6. Capacitance Characteristics 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 Crss Coss Ciss Common Emitter VGE = 0V, f = 1MHZ T = 25 C C 16 12 8 4 0 0 4 40A 25A IC = 12.5A Capacitance (pF) 12 16 20 8 0 1 10 40 Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V) 2009. 10. 29 Revision No : 0 4/8 KGT25N120NDA Typical Performance Characteristics (Continued) Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance td(off) 1000 Switching Time (ns) td(on) Switching Time (ns) 100 tf tr Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C 100 Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 60 70 10 0 10 20 30 40 50 60 70 Gate Resistance RG (Ω) Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance 10 Fig 10. Turn-On Characteristics vs. Collector Current 100 td(on) Switching Loss (mJ) 1 Eoff Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C Switching Time (ns) Eon tr Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 0.1 0 10 20 30 10 0 20 30 40 50 60 70 40 50 Gate Resistance RG (Ω) Collector Current IC (Α) Fig 11. Turn-Off Characteristics vs. Collector Current 1000 Fig 12. Switching Loss vs. Collector Current 10.0 td(off) Switching Loss (mJ) Switching Time (ns) Eon 100 tf Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 1.0 Eoff Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 10 0 10 20 0.1 50 0 10 20 30 40 50 30 40 Collector Current IC (Α) Collector Current IC (Α) 2009. 10. 29 Revision No : 0 5/8 KGT25N120NDA Typical Performance Characteristics (Continued) Fig 13. Gate Charge Characteristics 16 Fig 14. SOA Characteristics 100.00 50µs Gate-Emitter Voitage VGE (V) 14 12 600V Vcc = 200V 400V Collector Current IC (A) Common Emitter RL = 24Ω TC = 25 C 10.00 200µs 1ms 10ms 10 8 6 4 2 0 0 20 40 60 80 1.00 0.10 0.01 100 120 140 160 180 200 Single nonrepetitive pulse Tc= 25 C Curves must be derated linearly with increase in temperature DC Operation 0.1 1 10 100 1000 Gate Charge Qg (nC) Collector-Emitter Voltage VCE (V) Fig 15. Turn-Off SOA 100 Collector Current IC (A) 10 1 Turn-Off Safe Operating Area VGE = 15V, TC = 125 C 1 10 100 1000 Collector-Emitter Voltage VCE (V) Fig 16. Transient Thermal Impedance of IGBT 10.000 Thermal Resistance (Zthjc) 1.000 0.5 0.100 0.2 0.1 0.05 PDM t1 t2 Single Pluse 0.010 0.02 0.01 0.001 1E-5 1. Duty factor D=t1/t2 2. Peak Tj = Pdm Zthjc + TC 1E-3 1E-2 1E-1 1E+00 1E+01 1E-4 Rectangular Pulse Duration (sec) 2009. 10. 29 Revision No : 0 6/8 KGT25N120NDA Typical Performance Characteristics Fig 17. Forward Characteristics Reverse Recovery Current IRRM (A) 50 TC = 25 C TC = 125 C Fig 18. Reverse Recovery Current 30 25 20 15 10 5 0 0 5 10 15 20 25 di/dt=200A/µs Forward Current IF (A) 10 di/dt=100A/µs 1 TC = 125 C TC = 25 C 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage VF (V) Forward Current IF (A) Fig 19. Reverse Recovery Time 400 Reverse Recovery Time trr (ns) 300 di/dt=100A/µs 200 di/dt=200A/µs 100 0 0 5 10 15 20 25 Forward Current IF (A) 2009. 10. 29 Revision No : 0 7/8 KGT25N120NDA Definition Switching Time & Loss. Fig 21. Switching Test Circuit Diode Clamp /DUT G _ Measurement Pulse Rg C L E C DUT/ DRIVER E + _ 600V + -10V G VGE = 15V Fig 22. Definition Switching Time & Loss GATE VOLTAGE DUT 10% + Vg + Vg + Vge 90% Vge Vce 10% Ic 90% Ic OUT VOLTAGE AND CURRENT Ic Ipk Ic Vce 10% Vce Ic tf 90% Ic 10% Ic Vcc td (off) td (on) tr t2 Eon = Vce Ic dt t1 ∫ t2 Eoff = Vce Ic dt t1 ∫ t1 t2 t1 t2 Fig 23. Definition Diode Switching Time Ic tx Vpk trr Qrr = ∫ trr Ic dt tx 10% Irr Vcc DIODE REVERSE WAVEFORMS 2009. 10. 29 Revision No : 0 8/8