KGT25N120NDH

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ・High speed switching ・High system efficiency ・Soft current turn-off waveforms ・Extremely enhanced avalanche capability KGT25N120NDH MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range @Tc=25℃ @Tc=100℃ @Tc=100℃ @Tc=25℃ @Tc=100℃ SYMBOL VCES VGES IC ICM* IF IFM PD Tj Tstg RATING 1200 ±20 50 25 90 25 150 225 90 150 -55 to + 150 UNIT V V A A A A A W W ℃ ℃ *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.57 2.8 40 UNIT ℃/W ℃/W ℃/W G E C 2011. 8. 9 Revision No : 0 1/7 KGT25N120NDH ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage BVCES ICES IGES VGE(th) VGE=0V , IC=1mA VGE=0V, VCE=1200V VCE=0V, VGE=±20V VGE=VCE, IC=25mA VGE=15V, IC=25A Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=25A, TC = 125℃ VGE=15V, IC=50A Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres VCE=30V, VGE=0V, f=1MHz VCC=600V, IC=25A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ VCC=600V, IC=25A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ VCC=600V, VGE=15V, IC= 25A 150 20 70 40 25 200 150 3.5 1.2 4.7 45 30 210 220 4.0 2.0 6.0 2500 100 70 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF 1200 4.5 6.0 1.85 2.15 2.40 1.0 ±100 7.5 2.25 V mA nA V V V V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Marking 2011. 8. 9 Revision No : 0 2/7 KGT25N120NDH ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage SYMBOL VF IF = 25A TEST CONDITION TC=25℃ TC=125℃ TC=25℃ TC=125℃ IF = 25A di/dt = 200A/μ s TC=25℃ TC=125℃ TC=25℃ TC=125℃ MIN. TYP. 1.8 1.9 230 300 27 31 3100 4650 MAX. 2.5 V 330 ns 35 A 4700 nC UNIT Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr 2011. 8. 9 Revision No : 0 3/7 KGT25N120NDH 2011. 8. 9 Revision No : 0 4/7 KGT25N120NDH 2011. 8. 9 Revision No : 0 5/7 KGT25N120NDH 2011. 8. 9 Revision No : 0 6/7 KGT25N120NDH 2011. 8. 9 Revision No : 0 7/7