KGT40N60KDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ・High system efficiency ・Short Circuit Withstand Times ≻10us ・Extremely enhanced avalanche capability F G KGT40N60KDA O A B S K ・High speed switching D E H P P 1 2 3 DIM MILLIMETERS _ A 15.90 + 0.30 _ B 5.00 + 0.20 _ C 20.85 + 0.30 _ D 3.00 + 0.20 _ E 2.00 + 0.20 _ F 1.20 + 0.20 Max. 4.50 MG _ H 20.10 + 0.70 _ 0.60 + 0.02 I _ J I 14.70 + 0.20 _ K 2.00 + 0.10 _ 2.40 + 0.20 M _ O 3.60 + 0.30 _ 5.45 + 0.30 P _ Q 3.60 + 0.20 _ R 7.19 + 0.10 S 1. GATE 2. COLLECTOR 3. EMITTER J C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current @Tc=100℃ Diode Maximum Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range @Tc=25℃ @Tc=100℃ @Tc=25℃ @Tc=100℃ SYMBOL VCES VGES IC ICM* IF IFM PD Tj Tstg RATING 600 ±20 80 40 120 40 80 290 116 150 -55 to + 150 UNIT V V A A A A TO-247 C G E A W W ℃ ℃ E C G *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.43 1.45 40 UNIT ℃/W ℃/W ℃/W 2011. 8. 30 Revision No : 0 1/7 KGT40N60KDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage BVCES ICES IGES VGE(th) VGE=0V , IC=250㎂ VGE=0V, VCE=600V VCE=0V, VGE=±20V VGE=VCE, IC=250㎂ VGE=15V, IC=40A Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=40A, TC = 125℃ VGE=15V, IC=80A, TC = 25℃ Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Short Circuit Withstand Time Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres tsc VCC=300V, VGE=15V, TC=100℃ VCE=30V, VGE=0V, f=1MHz VCC=300V, IC=40A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ VCC=300V, IC=40A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ VCC=400V, VGE=15V, IC= 40A 10 170 25 80 50 40 170 35 0.6 0.4 1.0 55 50 185 75 1.2 1.0 2.2 3200 200 100 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF μ s 600 4.5 5.5 1.80 2.10 2.45 250 ±100 7.0 2.20 V ㎂ nA V V V V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Note 1 : Energy loss include tail current and diode reverse recovery. Marking KGT 40N60KDA 025 1 2 3 Device Mark 1 Device Mark 2 Lot No 2011. 8. 30 Revision No : 0 2/7 KGT40N60KDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage SYMBOL VF IF = 40A TEST CONDITION TC=25℃ TC=125℃ TC=25℃ TC=125℃ IF = 40A di/dt = -600A/μ s TC=25℃ TC=125℃ TC=25℃ TC=125℃ MIN. TYP. 1.8 1.5 90 105 16 29 730 1550 MAX. 2.3 V ns A nC UNIT Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr 2011. 8. 30 Revision No : 0 3/7 KGT40N60KDA Fig 1. Saturation Voltage Characteristics 200 180 20V Fig 2. Saturation Voltage Characteristics 100 Common Emitter VGE = 15V TC = 25 C TC = 125 C 15V Collector Current IC (A) 160 140 120 100 80 60 40 20 0 0 2 4 6 Common Emitter TC=25 C 10V 12V Collector Current IC (A) 90 80 70 60 50 40 30 20 10 0 0 8 10 1 2 3 4 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Fig 3. Saturation Voltage vs. Case Temperature Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) 3.5 Common Emitter VGE = 15V IC = 80A Fig 4. Saturation Voltage vs. VGE 20 Common Emitter TC = 25 C 3.0 16 12 8 4 0 0 4 8 12 16 20 2.5 IC = 40A 40A 60A IC = 20A 2.0 1.5 0 50 100 150 Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V) Fig 5. Saturation Voltage vs. VGE Collector - Emitter Voltage VCE (V) 20 Common Emitter TC = 125 C Fig 6. Capacitance Characteristics 5000 4500 4000 Ciss Common Emitter VGE = 0V, f = 1MHZ TC = 25 C 16 12 8 4 0 0 4 8 12 16 20 Capacitance (pF) 3500 3000 2500 2000 1500 Coss 1000 Crss 500 0 1 10 100 40A IC = 20A 60A Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V) 2011. 8. 30 Revision No : 0 4/7 KGT40N60KDA Fig 7. Turn-On Characteristics vs. Gate Resistance 1000 Fig 8. Turn-Off Characteristics vs. Gate Resistance 1000 Switching Time (ns) Switching Time (ns) tr td(off) 100 td(on) Common Emitter VCC = 300V, VGE = 15V IC = 40A TC = 25 C TC = 125 C 100 tf Common Emitter VCC = 300V, VGE = 15V IC = 40A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 60 10 0 10 20 30 40 50 60 Gate Resistance RG (Ω) Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance 10 Fig 10. Turn-On Characteristics vs. Collector Current 100 Switching Loss (mJ) E(on) Switching Time (ns) td(on) 1 E(off) Common Emitter VCC = 300V, VGE = 15V IC = 40A TC = 25 C TC = 125 C tr 0.1 0 10 20 30 10 0 10 20 30 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 40 50 60 40 50 60 Gate Resistance RG (Ω) Collector Current IC (Α) Fig 11. Turn-Off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C Fig 12. Switching Loss vs. Collector Current 10 Switching Loss (mJ) Switching Time (ns) td(off) E(on) 100 tf 1 E(off) 10 5 10 20 30 40 50 60 0.1 0 10 20 30 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 40 50 60 Collector Current IC (Α) Collector Current IC (Α) 2011. 8. 30 Revision No : 0 5/7 KGT40N60KDA Fig 13. Gate Charge Characteristics 20 Fig 14. SOA Characteristics 1000 Gate-Emitter Voitage VGE (V) 18 Common Emitter 600V 400V Vcc = 200V Collector Current IC (A) 16 TC = 25 C 14 12 10 8 6 4 2 0 0 50 IC = 40Α 100 10 1 Single nonrepetitive pulse 50µs 200µs 1ms 10ms DC Operation 0.1 Tc= 25 C 0.01 0.1 Curves must be derated linearly with increase in temperature 100 150 200 250 1 10 100 1000 10000 Gate Charge Qg (nC) Collector-Emitter Voltage VCE (V) Fig 15. Turn-Off SOA 1000 Collector Current IC (A) 100 10 1 Turn-Off Safe Operating Area VGE = 15V, TC = 125 C 1 10 100 1000 Collector-Emitter Voltage VCE (V) Fig 16. Transient Thermal Impedance of IGBT 1 Thermal Resistance (Zthjc) Duty=0.5 0.1 0.2 0.1 0.0 5 PDM t1 t2 0.01 0.0 0.0 2 1 Single Pluse 1. Duty factor D=t1/t2 2. Peak Tj = Pdm Zthjc + TC 0.001 1E-5 1E-4 1E-3 1E-2 1E-1 1E+00 1E+01 Rectangular Pulse Duration (sec) 2011. 8. 30 Revision No : 0 6/7 KGT40N60KDA Fig 17. Forward Characteristics Reverse Recovery Current IRRM (A) 1000 35 30 25 20 15 10 5 0 0 Fig 18. Reverse Recovery Current di/dt=600A/µs Forward Current IF (A) 100 TC = 125 C 10 TC = 25 C 1 di/dt=400A/µs 0.1 0 1 2 3 4 25 C 125 C 20 40 60 80 100 Forward Voltage VF (V) Forward Current IF (A) Fig 19. Reverse Recovery Time 140 Reverse Recovery Time trr (ns) 120 100 80 60 40 20 0 0 20 40 60 80 25 C 125 C di/dt=600A/µs di/dt=400A/µs 100 Forward Current IF (A) 2011. 8. 30 Revision No : 0 7/7