S EMICONDUCTOR
TECHNICAL DATA
General Description
KHB019N20P1/F1/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB019N20P1
A O C F E G B Q I K M L J D N N H P
DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies.
FEATURES
VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V
15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 0.2 4.5 + _ 2.4 + 0.2 _ 9.2 + 0.2
1. GATE 2. DRAIN 3. SOURCE
P Q
MAXIMUM RATING (Tc=25
)
RATING
TO-220AB
CHARACTERISTIC
SYMBOL KHB019N20P1
KHB019N20F1 UNIT KHB019N20F2 V V 19* 12.1* 76* A
K L E
KHB019N20F1
A F C
B
Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25
VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 140 1.12 19 12.1 76
30
O
Drain-Source Voltage
VDSS
200
DIM
MILLIMETERS
M J
R
250 14 4.5 50 0.4 150 -55 150
mJ
D
mJ V/ns
Q 1
N
N
H
2
3
A B C D E F G H J K L M N O Q R
_ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 0.2 12.57 + _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2
W W/
G
1. GATE 2. DRAIN 3. SOURCE
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
TO-220IS (1)
KHB019N20F2
A C F
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient
RthJC RthCS RthJA
0.89 0.5 62.5
2.5 62.5
/W
S
/W /W
P
E G B
DIM
MILLIMETERS
* : Drain current limited by maximum junction temperature.
K L L R J
PIN CONNECTION
D
M D
D
N N H
G
1
2
3
A B C D E F G H J K L M N P Q R S
_ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ
Q
1. GATE 2. DRAIN 3. SOURCE
S
TO-220IS
2007. 5. 10
Revision No : 0
1/7
KHB019N20P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
)
TEST CONDITION MIN. TYP. MAX. UNIT
SYMBOL
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=200V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=9.5A 200 2 0.18 0.14 10 4 100 0.18 V V/ A V nA
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS
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