KHB2D0N60F

SEMICONDUCTOR TECHNICAL DATA General Description KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB2D0N60P A O C F E G B Q I DIM MILLIMETERS _ 9.9 + 0.2 A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 10.9nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 H K L M N O P Q 1 2 3 MAXIMUM RATING (Tc=25 ) RATING 1. GATE 2. DRAIN 3. SOURCE TO-220AB CHARACTERISTIC SYMBOL KHB2D0N60F UNIT KHB2D0N60P KHB2D0N60F2 600 30 2.0 2.0* 1.2* 8.0* 120 5.4 5.5 54 23 0.18 150 -55 150 mJ mJ V/ns Q KHB2D0N60F A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID 1.2 IDP EAS EAR dv/dt PD 0.43 Tj Tstg 8.0 V V O B E G DIM MILLIMETERS A K L M J R D N N H W W/ 1 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics TO-220IS (1) KHB2D0N60F2 A C F Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient RthJC RthCS RthJA 2.32 0.5 62.5 5.5 62.5 /W S /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R D D D N N H J PIN CONNECTION M G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 +0.2 _ 3.0 + 0.3 _ 0.3 12.0 + 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 0.2 4.5 + _ 2.6 + 0.2 0.5 Typ Q 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB2D0N60P/F/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V 600 2.0 0.65 3.8 10 4.0 100 5.0 V V/ A V nA VGS=10V, ID=1.0A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS