SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB3D0N90P1/F1/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB3D0N90P1
A O C F E G B Q I K M P L J D N N H
DIM A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.
MILLIMETERS
FEATURES
VDSS= 900V, ID= 3A Drain-Source ON Resistance : RDS(ON)=4.5 Qg(typ.) = 25nC @VGS = 10V
_ 9.9 + 0.2 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2
1. GATE 2. DRAIN 3. SOURCE
P Q
MAXIMUM RATING (Tc=25
)
RATING
TO-220AB
KHB3D0N90F1
CHARACTERISTIC
SYMBOL
F
KHB3D0N90F1 UNIT KHB3D0N90P1 KHB3D0N90F2 900 30 3.0 12 450 13 4.0 130 43 0.34 150 -55 150 3.0* A 12* mJ
D
A
C
B
Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25
VDSS VGSS ID IDP EAS EAR dv/dt PD 1.04 Tj Tstg
V V
O
E
DIM
MILLIMETERS
L
M
R
mJ V/ns W W/
N
N
H
Q
1
2
3
A B C D E F G H J K L M N O Q R
_ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2
K
G J
1. GATE 2. DRAIN 3. SOURCE
TO-220IS (1)
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient
KHB3D0N90F2
A C
RthJC RthJA
0.96 62.5
2.9 62.5
/W /W
S E
F
P
DIM
MILLIMETERS
* : Drain current limited by maximum junction temperature.
K
L L R
PIN CONNECTION
D
M D
D
N N H
G
1
2
3
A B C D E F G H J K L M N P Q R S
_ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 +0.2 _ 3.0 + 0.3 _ 0.3 12.0 + 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ
G Q J
1. GATE 2. DRAIN 3. SOURCE
S
TO-220IS
2007. 9. 10
Revision No : 0
B
1/7
KHB3D0N90P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
)
TEST CONDITION MIN. TYP. MAX. UNIT
SYMBOL
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=900V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=1.5A 900 2.0 1 4.0 4.0 10 100 4.5 V V/ V A nA
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS
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