KHB4D0N65P

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. A KHB4D0N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N65P O C F E G B Q I DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q FEATURES VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 Qg(typ.)=20nC @VGS = 10V K M L J D N N P H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) ) RATING SYMBOL KHB4D0N65P KHB4D0N65F VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 106 0.85 150 -55 150 Q UNIT 650 30 4.0 16 260 10.6 4.5 36 0.29 4.0* A 16* E TO-220AB KHB4D0N65F A F V V C O DIM B MILLIMETERS Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 mJ mJ V/ns W W/ D N N K L M J R Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient H 1 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 RthJC RthJA 1.18 62.5 3.47 62.5 /W /W * : Drain current limited by maximum junction temperature. TO-220IS (1) D G G S 2007. 3. 26 Revision No : 1 1/7 KHB4D0N65P/F ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=650V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=2.0A VDS=50V, ID=2.0A (Note4) 650 2.0 0.95 2.4 3.8 4.0 10 100 3.0 S V V/ V A nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS