KHB4D0N80F2

SEMICONDUCTOR TECHNICAL DATA General Description KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A O C F E G B Q I K M L J D N N H P DIM A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. MILLIMETERS FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 Qg(typ.)=25nC @VGS = 10V _ 9.9 + 0.2 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 1. GATE 2. DRAIN 3. SOURCE P Q MAXIMUM RATING (Tc=25 ) RATING TO-220AB KHB4D0N80F1 CHARACTERISTIC SYMBOL KHB4D0N80F1 UNIT KHB4D0N80P1 KHB4D0N80F2 800 30 4.0 16 460 13 4.0 130 43 0.34 150 -55 150 4.0* A 16* mJ mJ Q K L A C F B Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD 1.04 Tj Tstg V V O E DIM MILLIMETERS M R D N N H V/ns W W/ 1 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 G J 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) KHB4D0N80F2 A C Maximum Junction Temperature Storage Temperature Range Thermal Characteristics S Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 0.96 62.5 2.9 62.5 /W /W F P E DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 0.3 2.70 + 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ G Q J 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 9. 10 Revision No : 0 B 1/7 KHB4D0N80P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=800V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=2.0A VDS=50V, ID=2.0A (Note4) 800 2.0 0.95 3.0 3.8 4.0 10 100 3.6 S V V/ V A nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS