KHB9D0N50F1

SEMICONDUCTOR TECHNICAL DATA General Description KHB9D0N50P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D0N50P1 A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V Qg(typ.) =34.6nC 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 0.2 4.5 + _ 2.4 + 0.2 _ 9.2 + 0.2 MAXIMUM RATING (Tc=25 CHARACTERISTIC ) RATING SYMBOL KHB9D0N50F1 UNIT KHB9D0N50P1 KHB9D0N50F2 500 30 9 ID 5.4 IDP EAS EAR dv/dt 135 PD 1.07 Tj Tstg 150 -55 150 0.35 W/ 36 360 13.5 4.5 44 5.4* 36* mJ mJ V/ns W Q 1 2 3 K L M 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB KHB9D0N50F1 Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS V V 9* A E A F C O DIM B MILLIMETERS R J D N N H A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 G 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient TO-220IS (1) KHB9D0N50F2 RthJC RthCS RthJA 0.93 0.5 62.5 2.86 62.5 A /W S F C /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R J PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 0.3 2.70 + 0.76+0.09/-0.05 _ Φ3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB9D0N50P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=500V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V 500 2.0 0.57 0.65 10 4.0 100 0.8 V V/ A V nA VGS=10V, ID=4.5A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS