KIC7S66FU_08

SEMICONDUCTOR TECHNICAL DATA BILATERAL SWITCH The KIC7S66FU is a high speed C2MOS BILATERAL SWITCH fabricated with silicon gate C2MOS technology. It consists of a high speed switch capable of controlling either digital or analog signals while maintaining the C2MOS low power dissipation. Control input (C) is provided to control the switch. The switch turns ON while the Cl input is high, and the switch turns OFF while low. Input is equipped with protection circuits against static discharge or transient excess voltage. KIC7S66FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B B1 1 5 2 3 4 D H T G DIM A A1 B B1 C D G H T MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 FEATURES ・High Speed : tpd=7ns(Typ.) at VCC=5V. ・Low Power Dissipation : ICC=1μ A(Max.) at Ta=25℃. ・High Noise Immunity : VNIH=VNIL=28% VCC(Min.). ・Low ON Resistance : RON=100Ω(Typ.) at VCC=9V. ・Low T.H.D : THD=0.05%(Typ.) at VCC=5V. C A1 A C USV MARKING MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC DC Supply Voltage Control Input Voltage Swith I/O Voltage Control Diode Current Output Diode Current Through I/O Current DC VCC/Ground Current Power Dissipation Storage Temperature Lead Temperature (10s) SYMBOL VCC VIN VI/O ICK IOK IT ICC PD Tstg TL RATING -0.5～10 -0.5～VCC+0.5 -0.5～VCC+0.5 ±20 ±20 ±12.5 ±25 200 -65～150 260 UNIT V V V mA mA mA mA mW ℃ ℃ OUT/IN 2 IN/OUT 1 5 VCC Lot No. Type Name SW PIN CONNECTION (TOP VIEW) GND 3 4 CONT. 2008 .9. 17 Revision No : 3 1/3 KIC7S66FU LOGIC DIAGRAM C I/O X1 I I O/I TRUTH TABLE CONTROL H L SWITCH FUNCTION ON OFF RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC Supply Voltage Control Input Voltage Switch I/O Voltage Operating Temperature SYMBOL VCC VIN VI/O Topr RATING 2～9 0～VCC 0～VCC -40～85 0～1000 (VCC=2.0V) 0～ 500 (VCC=4.5V) 0～ 400 (VCC=6.0V) 0～ 250 (VCC=9.0V) UNIT V V V ℃ Input Rise and Fall Time tr, tf ns DC ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL TEST CONDITION VCC High-Level Control Input Voltage Low-Level Control Input Voltage VIHC 2.0 4.5 9.0 2.0 4.5 9.0 4.5 9.0 2.0 4.5 9.0 9.0 MIN. 1.5 3.15 6.3 Ta=25℃ TYP. 192 110 320 140 100 MAX. 0.5 1.35 2.7 340 170 200 150 ±100 Ta=-40～85℃ MIN. 1.5 3.15 6.3 MAX. 0.5 1.35 2.7 400 200 260 190 ±1000 Ω V UNIT VILC VIN=VIHC VI/O=VCC to GND VI/O≦1mA VIN=VIHC VI/O=VCC to GND VI/O≦1mA VOS=VCC or GND VIS=GND or VCC VIN=VILC VOS=VCC or GND VIN=VIHC V ON Resistance RON Input/Output Leakage Current (SWITCH OFF) Switch Input Leakage Current (SW ON, Output OPEN) Control Input Current IOFF IIZ 9.0 - - ±100 - ±1000 nA IIN VIN=VCC or GND 9.0 - - ±100 - ±1000 Quiscent Device Current ICC VIN=VCC or GND 6.0 9.0 - - 1.0 4.0 - 10.0 40.0 μ A 2008 .9. 17 Revision No : 3 2/3 KIC7S66FU AC ELECTRICAL CHARACTERISTICS (CL=50pF, Input tr=tf=6ns) Ta=25℃ CHARACTERISTIC SYMBOL TEST CONDITION VCC Phase difference between input and output фI-O 2.0 4.5 9.0 2.0 4.5 9.0 2.0 4.5 9.0 2.0 4.5 9.0 MIN. TYP. 20 7 4 20 13 9 40 11 10 30 30 30 5 6 0.5 15 MAX. 75 15 12 150 30 18 170 35 30 10 MIN. MAX. 100 20 15 190 38 33 220 44 38 10 pF (Note 1) ns Ta=-40～85℃ UNIT Output Enable Time tPZL tPZH tPLZ tPHZ RL=1kΩ ns Output Disable Time RL=1kΩ ns Maximum Control Input Frequency Control Input Capacitance Switch Terminal Capacitance Feedthrough Capacitance Power Dissipation Capacitance CIN CI/O CIOS CPD RL=1kΩ, CL=15pF VOUT=1/2 VCC - MHz Note 1 : CPD defined as the value of internal equivalent capacitance which is calculated from the operating current consumption without load Average operating current can be obtained by the equation : ICC(opr)=CPD・VCC・fIN + ICC ANALOG SWITCH CHARACTERISTICS (GND=0V, Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION VCC Total Harmonic Distortion (T.H.D) Maximum Propagation Frequency (SWITCH ON) Feedthrough (SWITCH ON) Crosstalk (CONTROL SWITCH) fIN=1kHz, VIN=4VPP (VCC=4.5V) RL=10kΩ, VIN=8VPP (VCC=9.0V), CL=50pF Adjust fIN voltage to obtain 0dBm at VOS Increase fIN frequency until dB Meter reads -3dB. RL=50Ω, CL=10pF, fIN=1MHz, Sine Wave Vin is ceintered at VCC/2 Adjust input for 0dBm RL=600Ω, CL=50pF, fIN=1MHz, Sine Wave 4.5 9.0 4.5 9.0 4.5 9.0 4.5 9.0 0.05 0.04 200 200 -60 -60 60 100 % TYP. UNIT fMAX MHz - dB - RL=600Ω, CL=50pF, IN=1MHz, PULSE (tr=tf=6ns) mV Note : These Characteristics are determined by design of devices. 2008 .9. 17 Revision No : 3 3/3