SEMICONDUCT OR
TECHNICAL DATA
SCHMITT INVERTER FEATURES
・High output drive : ±24mA(min.) @VCC=3V. ・High Speed : tpd=3.7ns(typ.) @VCC=5V, 50pF. ・Wide Operating Voltage Range : VCC(opr)=1.65~5.5V. ・High Latch-Up Immunity : Higher than or equal to ±500mA. ・High ESD : Higher than or equal to ±200V(JEITA)
A1
KIC7SZ14FU
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT
B B1 1 5
: Higher than or equal to ±2000V(MIL) ・Power down protection is provided on all inputs and outputs.
2
DIM A A1 B
D B1 C D G H T
3
4
H
T G
MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05
A
MAXIMUM RATINGS (Ta=25℃)
CHARACTERISTIC Supply Voltage Range DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/ground Current Power Dissipation Storage Temperature Range Lead Temperature (10s) SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5~6 -0.5~6 -0.5~6 -20 -20 ±50 ±50 200 -65~150 260 UNIT V V V mA mA mA mA mW ℃ ℃
C
C
USV
MARKING
Type Name
TF
PIN CONNECTION(TOP VIEW)
NC
1
5
V CC
IN A
2
GND
3
4
OUT Y
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KIC7SZ14FU
Logic Diagram
IN A
OUT Y
Recommended Operating Conditions
CHARACTERISTIC Supply Voltage Input Voltage Output Voltage Operating Temperature Note1 : Data retention only. Note2 : VCC=0V. Note3 : High or low state SYMBOL VCC VIN VOUT Topr RATING 1.65~5.5 1.5~5.5 0~5.5 0~5.5 0~VCC -40~85 (Note2) (Note3) (Note1) UNIT V V V ℃
ELECTRICAL CHARACTERISTICS DC Characteristics
CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.65 1.8 Positive Threshold Voltage VP 2.3 3.0 4.5 5.5 1.65 1.8 Negative Threshold Voltage VN 2.3 3.0 4.5 5.5 1.65 1.8 Hysteresis Voltage VH 2.3 3.0 4.5 5.5 MIN. 0.6 0.7 1.0 1.3 1.9 2.2 0.2 0.25 0.40 0.6 1.0 1.2 0.1 0.15 0.25 0.4 0.6 0.7 Ta=25℃ TYP. 1.0 1.1 1.4 1.75 2.45 2.9 0.5 0.55 0.75 1.0 1.43 1.70 0.48 0.54 0.65 0.77 1.01 1.18 MAX. 1.4 1.5 1.8 2.2 3.1 3.6 0.8 0.9 1.15 1.5 2.0 2.4 0.9 1.0 1.1 1.2 1.5 1.7 Ta=-40~85℃ MIN. 0.65 0.7 1.0 1.3 1.9 2.2 0.2 0.25 0.40 0.6 1.0 1.2 0.1 0.15 0.25 0.4 0.6 0.7 MAX. 1.4 1.5 1.8 2.2 3.1 3.6 0.8 0.9 1.15 1.5 2.0 2.4 1.0 1.0 1.1 1.2 1.5 1.7 V V V UNIT
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KIC7SZ14FU
TEST CONDITION VCC(V) 1.65 1.8 IOH=-100μ A 2.3 3.0 High-Level Output Voltage VOH VIN=VIL 4.5 IOH=-4mA IOH=-8mA IOH=-16mA IOH=-24mA IOH=-32mA 1.65 2.3 3.0 3.0 4.5 1.65 1.8 IOL=100μ A 2.3 3.0 VOL VIN=VIH 4.5 IOL=4mA IOL=8mA IOL=16mA IOL=24mA IOL=32mA Input Leakage Current Power OFF Leakage Current Quiescent Supply Current IIN IOFF ICC VIN=5.5V or GND VIN or VOUT=5.5V VIN=5.5V or GND 1.65 2.3 3.0 3.0 4.5 0~5.5 0.0 1.65~5.5 MIN. 1.55 1.7 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 Ta=25℃ TYP. 1.65 1.8 2.3 3.0 4.5 1.52 2.15 2.8 2.68 4.2 0 0 0 0 0 0.08 0.1 0.15 0.22 0.22 MAX. 0.1 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 ±1 1 1 Ta=-40~85℃ MIN. 1.55 1.7 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 MAX. 0.1 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 ±10 10 10 μ A μ A μ A V V
CHARACTERISTIC
SYMBOL
UNIT
AC Characteristics (unless otherwise specified, Input : tr=tf=3ns)
CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.65 1.8 Propagation delay time tPLH tPHL CL=15pF, RL=1MΩ 2.5±0.2 3.3±0.3 5.0±0.5 CL=50pF, RL=500Ω Input Capacitance CIN 3.3±0.3 5.0±0.5 MIN. 2.0 2.0 1.0 1.0 0.5 1.5 0.5 Ta=25℃ TYP. 9.1 7.6 5.0 3.7 3.1 4.4 3.7 MAX. 15.0 12.5 9.0 6.3 5.2 7.2 5.9 Ta=-40~85℃ MIN. 2.0 2.0 1.0 1.0 0.5 1.5 0.8 MAX. 15.6 13 9.5 6.5 5.5 7.5 6.2 ns pF pF ns UNIT
Power Dissipation CPD (Note4) Capacitance Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : ICC(opr)=CPD・VCC・fIN+ICC
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Revision No : 0
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