KIC7SZ32FU

SEMICONDUCTOR TECHNICAL DATA 2 INPUT OR GATE KIC7SZ32FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT FEATURES ・High Output Drive : ±24mA (Typ.) @VCC=3V ・Super High Speed Operation : tPD=2.4ns(Typ.) @VCC=5V, 50pF ・Operation Voltage Range : VCC(opr)=1.8～5.5V. A1 C 1 2 3 B B1 5 ・Supply Voltage Data Retention : VCC=1.5～5.5V. ・5V Tolerant Function 4 D H T G DIM A A1 B B1 C D G H T MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 A C MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Supply Voltage Range DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/Ground Current Power Dissipation Storage Temperature Lead Temperature (10s) SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5～6 -0.5～6 -0.5～6 ±20 ±20 ±50 ±50 200 -65～150 260 UNIT V V V mA mA mA mA mW ℃ ℃ USV MARKING Lot No. Type Name TG PIN CONNECTION (TOP VIEW) VCC 5 OUT Y 4 1 IN B 2 IN A 3 GND 2008. 9. 17 Revision No : 2 1/3 KIC7SZ32FU LOGIC DIAGRAM IN A IN B 1 OUT Y DC ELECTRICAL CHARACTERISTICS Ta=25℃ CHARACTERISTIC SYMBOL TEST CONDITION VCC (V) 1.8 High-Level Input Voltage VIH 2.3～ 5.5 1.8 Low-Level Input Voltage VIL 2.3～ 5.5 1.8 2.3 IOH=-100μ A 3.0 High-Level Output Voltage VOH VIN=VIH or VIL 4.5 IOH=-8mA IOH=-16mA IOH=-24mA IOH=-32mA 2.3 3.0 3.0 4.5 1.8 2.3 IOL=100μ A 3.0 Low-Level Output Voltage VOL VIN=VIH or VIL 4.5 IOL=8mA IOL=16mA IOL=24mA IOL=32mA Input Leakage Current Quiescent Supply Current IIN ICC VIN=5.5V or GND VIN=VCC or GND 2.3 3.0 3.0 4.5 0～5.5 5.5 0 0 0.1 0.15 0.22 0.22 0.1 0.1 0.3 0.4 0.55 0.55 ±1 2 0.1 0.1 V 0.3 0.4 0.55 0.55 ±10 μ A 20 2.9 4.4 1.9 2.4 2.3 3.8 3.0 4.5 2.15 2.8 2.68 4.2 0 0 0.1 0.1 2.9 4.4 1.9 2.4 2.3 3.8 V 0.1 0.1 MIN. 0.88 ×VCC 0.75 ×VCC 1.7 2.2 TYP. 1.8 2.3 MAX. 0.12 ×VCC 0.25 ×VCC MIN. 0.88 ×VCC 0.75 ×VCC 1.7 2.2 MAX. V 0.12 ×VCC 0.25 ×VCC Ta=-40～85℃ UNIT V 2008. 9. 17 Revision No : 2 2/3 KIC7SZ32FU AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns) CHARACTERISTIC SYMBOL TEST CONDITION Ta=25℃ VCC (V) 1.8 CL=15pF, RL=1MΩ 2.5±0.2 3.3±0.3 5.0±0.5 CL=50pF, RL=500Ω Input Capacitance Power Dissipation Capacitance CIN CPD (Note1) 3.5 26 3.3±0.3 5.0±0.5 0~5.5 3.3 MIN. 2.0 0.8 0.5 0.5 1.5 0.8 TYP. 4.6 3.0 2.4 1.9 3.0 2.4 4 20 MAX. 10.0 7.0 4.7 4.1 5.2 4.5 Ta=-40～85℃ UNIT MIN. 2.0 0.8 0.5 0.5 1.5 0.8 MAX. 10.5 7.5 5.0 ns 4.4 5.5 4.8 pF Propagation Delay Time tPLH tPHL Note 1 : CPD defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder. ICC(opr)=CPD・VCC・fIN+ICC 2008. 9. 17 Revision No : 2 3/3