KIC7SZ86FU

SEMICONDUCT OR TECHNICAL DATA EXCLUSIVE OR GATE FEATURES ・Super High Speed : tPD=2.9ns(Typ.) into 50pF at VCC=5V. ・High Output Driver : ±24mA at VCC=3V. ・Power Down High Impedance inputs/outputs. ・Wide Operating Voltage Range : VCC(opr)=1.65~5.5V. A1 KIC7SZ86FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B B1 1 5 2 3 4 D H MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Supply Voltage Range DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/Ground Current Power Dissipation Storage Temperature Lead Temperature (10s) SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5～6 -0.5～6 -0.5～6 -50~20 -50~20 ±50 ±50 200 -65～150 260 UNIT V V V mA mA mA mA mW ℃ ℃ T G DIM A A1 B B1 C D G H T MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 A C C USV MARKING Type Name TJ Logic Diagram IN B IN A (1) (2) =1 (4) OUT Y PIN CONNECTION(TOP VIEW) VCC 5 OUT Y 4 TRUTH TABEL A H L H L B H H L L Y L H H L 1 IN B 2 IN A 3 GND 2002. 5. 13 Revision No : 0 1/3 KIC7SZ86FU RECOMMENDED OPERATING CONDIITIONS CHARACTERISTIC Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time SYMBOL VCC VIN VOUT Topr tr, tf RATING 1.65～5.5 0～5.5 0～VCC -40～85 0～20 (VCC=1.8V, 2.5V±0.2V) 0～10 (VCC=3.3V±0.3V) 0～5 (VCC=5.0V±0.5V) ns/V UNIT V V V ℃ ELECTRICAL CHARACTERISTICS DC Characteristics CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.65~1.95 2.3~5.5 Low Level VIL 1.65~1.95 2.3~5.5 1.65 VIN=VIH・VIL IOH=-100μ A High Level VOH 1.8 2.3 3.0 4.5 IOH=-4mA IOH=-8mA IOH=-16mA IOH=-24mA Output Voltage IOH=-32mA 1.65 2.3 3.0 3.0 4.5 1.65 VIN=VIH or VIL IOL=100μ A Low Level VOL 1.8 2.3 3.0 4.5 IOL=4mA IOL=8mA IOL=16mA IOL=24mA IOL=32mA Input Leakage Current Power Off Leakage Current Quiescent Supply Current IIN IOFF ICC VIN=5.5V, GND VIN or VOUT=5.5V VIN=5.5V, GND 1.65 2.3 3.0 3.0 4.5 0~5.5 0.0 1.65~5.5 MIN. 0.75× VCC 0.7×VCC 1.55 1.7 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 Ta=25℃ TYP. 1.65 1.8 2.3 3.0 4.5 1.52 2.15 2.80 2.68 4.20 0.0 0.0 0.0 0.0 0.0 0.08 0.10 0.15 0.22 0.22 MAX. 0.25× VCC 0.3×VCC 0.1 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 ±1 1 2.0 Ta=-40~85℃ MIN. 0.75× VCC 0.7×VCC 1.55 1.7 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 MAX. 0.25× VCC 0.3×VCC 0.1 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 ±10 10 20 μ A μ A μ A V V UNIT High Level Input Voltage VIH 2002. 5. 13 Revision No : 0 2/3 KIC7SZ86FU AC Characteristics CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.65 tPLH tPHL 1.8 CL=15pF, RL=1MΩ 2.5±0.2 3.3±0.3 5.0±0.5 tPLH tPHL Input Capacitance Power Dissipation Capacitance (Figure 2) CIN CPD (Note) CL=50pF, RL=500Ω 3.3±0.3 5.0±0.5 0 3.3 5.0 MIN. 2.0 2.0 0.8 0.5 0.5 1.5 0.8 Ta=25℃ TYP. 6.9 5.7 3.8 3.0 2.4 3.5 2.9 4 25 31 MAX. 13.8 11.5 8.0 5.7 5.0 6.2 5.4 Ta=-40~85℃ MIN. 2.0 2.0 0.8 0.5 0.5 1.5 1.0 MAX. 14.5 12 8.5 6.0 5.4 6.5 5.8 ns pF pF ns UNIT Propagation Delay (Figures 1,3) Note : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic operating current by the exprssion : ICCD=CPD・VCC・fIN+ICC AC Loading and Waveforms VCC INPUT CL RL OUTPUT t r =3ns t f =3ns 90% 50% 10% t PLH VOH VCC INPUT CL includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns tw t PHL GND FIGURE 1. AC Test Circuit Out of Phase OUTPUT t PLH A In Phase OUTPUT INPUT 50% 50% 50% 50% t PHL VCC VOL VOH VOL FIGURE 3. AC Waveforms Input=AC Waveform ; t r =tf =1.8ns; PRR=10MHz ; Duty Cycle=50% FIGURE 2. I CCD Test Circuit 2002. 5. 13 Revision No : 0 3/3