SEMICONDUCTOR
TECHNICAL DATA
INVERTER (UNBUFFER)
KIC7SZU04FU
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT
FEATURES
High Output Drive : 16mA (Typ.) @VCC=4.5V
1
B B1 5
Super High Speed Operation : tPD=2.4ns(Typ.) @VCC=5V, 50pF Operation Voltage Range : VCC(opr)=1.8 5.5V.
A1 C
Supply Voltage Data Retention : VCC=1.5 5.5V.
2 3 4 D
H
T G
DIM A A1 B B1 C D G H T
MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05
A
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC Supply Voltage Range DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/Ground Current Power Dissipation Storage Temperature Lead Temperature (10s)
)
RATING -0.5 -0.5 6 6 UNIT V V V mA mA mA mA mW
SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL
C
USV
-0.5 VCC+0.5 20 20 50 50 200 -65 150 260
MARKING
Type Name
TN
PIN CONNECTION (TOP VIEW)
VCC 5 OUT Y 4
1 NC
2 IN A
3 GND
2002. 10. 14
Revision No : 1
1/3
KIC7SZU04FU
LOGIC DIAGRAM
IN A
1
OUT Y
DC ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION Ta=25 VCC (V) 1.8 High-Level Input Voltage VIH 2.3 5.5 1.8 2.7 3.0 5.5 1.8 IOH=-100 A High-Level Output Voltage 2.3 3.0 4.5 IOH=-4mA IOH=-8mA IOH=-12mA IOH=-16mA 2.3 3.0 3.0 4.5 1.8 IOL=100 A Low-Level Output Voltage 2.3 3.0 4.5 IOL=4mA IOL=8mA IOL=12mA IOL=16mA Input Leakage Current Quiescent Supply Current IIN ICC VIN=5.5V or GND VIN=VCC or GND 0 2.3 3.0 3.0 4.5 5.5 5.5 MIN. 0.85 VCC 0.8 VCC 1.6 2.1 2.7 4.0 1.9 2.4 2.3 3.8 TYP. 1.8 2.3 3.0 4.5 2.14 2.75 2.61 4.13 0 0 0 0 0.1 0.17 0.25 0.26 2 MAX. 0.15 VCC 0.2 VCC 0.2 0.2 0.3 0.5 0.3 0.4 0.55 0.55 1 Ta=-40 MIN. 0.85 VCC 0.8 VCC 1.6 2.1 2.7 4.0 1.9 2.4 2.3 3.8 85 MAX. V 0.15 VCC 0.2 VCC 0.2 0.2 0.3 0.5 0.3 0.4 0.55 0.55 10 20 A V V UNIT
Low-Level Input Voltage
VIL
-
V
VOH
VIN=VIL
VOL
VIN=VIH
2002. 10. 14
Revision No : 1
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KIC7SZU04FU
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns)
CHARACTERISTIC SYMBOL TEST CONDITION Ta=25 VCC (V) 1.8 CL=15pF, Propagation Delay Time tPLH tPHL CL=50pF, RL=500 Input Capacitance Power Dissipation Capacitance CIN CPD (Note 1) 3.5 9.5 RL=1M 2.5 3.3 5.0 3.3 5.0 0 0.2 0.3 0.5 0.3 0.5 5.5 3.3 MIN. 1.0 0.8 0.5 0.5 1.0 0.8 TYP. 4.5 6.3 MAX. 8.5 6.2 4.5 3.9 6.0 5.0 Ta=-40 MIN. 1.0 0.8 0.5 0.5 1.5 0.8 85 MAX. 9.0 6.5 4.8 ns 4.1 6.5 5.5 pF UNIT
Note 1 : CPD defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder. ICC(opr)=CPD VCC fIN+ICC
2002. 10. 14
Revision No : 1
3/3
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