KIC7WZ04FK

SEMICONDUCT OR TECHNICAL DATA Triple Inverter FEATURES ・High output drive : ±24mA(min.) @VCC=3V. ・Super high speed operation : tpd 2.3ns(typ.) @VCC=5V, 50pF. ・Operation voltage range : VCC(opr)=1.65~5.5V. ・Latch-up performance : ±500mA or more ・ESD performance : ±200V or more (EIAJ) ±2000V or more (MIL) ・Power down protection is provided on all inputs and outputs. A D DD KIC7WZ04FK SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B C 1 8 DIM A B C D E F G H MILLIMETERS _ 2.0 + 0.1 _ 3.1+ 0.1 _ 2.3 + 0.1 0.5 0.2+0.05/-0.04 _ 0.7+ 0.1 _ 0.12 + 0.04 0 ~ 0.1 4 5 MARKING F H G Type Name Z04 Lot No. US8 MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Power Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/ground Current Power Dissipation Storage Temperature Range Lead Temperature (10s) SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5~6 -0.5~6 -0.5~6 -20 -20 ±50 ±50 200 -65～150 260 UNIT V V V mA mA mA mA mW ℃ ℃ PIN CONNECTION(TOP VIEW) 1A 1 3Y 2 2A 3 GND 4 8 V CC 7 1Y 6 3A 5 2Y 2002. 5. 13 Revision No : 2 E 1/3 KIC7WZ04FK Truth Table A L H Y H L IN A Logic Diagram 1 OUT Y Recommended Operating Conditions CHARACTERISTIC Supply Voltage Input Voltage Output Voltage Operating Temperature SYMBOL VCC VIN VOUT Topr RATING 1.65~5.5 1.5~5.5 0~5.5 0~5.5 0~VCC -40~85 0~20 (VCC=1.8V±0.15V, Input Rise and Fall Time dt/dv 2.5V±0.2V) 0~10 (VCC=3.3V±0.3V) 0~5 (VCC=5.5V±0.5V) Note1 : Data retention only. Note2 : VCC=0V. Note3 : High or low state ns/V (Note2) (Note3) (Note1) UNIT V V V ℃ 2002. 5. 13 Revision No : 2 2/3 KIC7WZ04FK ELECTRICAL CHARACTERISTICS DC Characteristics CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.65~1.95 MIN. 0.75× VCC Ta=25℃ TYP. 1.65 2.3 3.0 4.5 1.52 2.15 2.8 2.68 4.2 0 0 0 0 0.08 0.1 0.15 0.22 0.22 MAX. 0.25× VCC 0.3×VCC 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 ±1 1 1 Ta=-40~85℃ MIN. 0.75× VCC 0.7×VCC 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 MAX. 0.25× VCC 0.3×VCC 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 ±10 10 10 μ A μ A μ A V V V UNIT High Level Input Voltage Low Level VIH 2.3~5.5 0.7×VCC VIL 1.65~1.95 2.3~5.5 1.65 IOH=-100μ A VIN= VIH or VIL 2.3 3.0 4.5 IOH=-4mA IOH=-8mA IOH=-16mA IOH=-24mA 1.65 2.3 3.0 3.0 4.5 1.65 IOL=100μ A 2.3 3.0 4.5 Low Level VOL VIN=VIL IOL=4mA IOL=8mA IOL=16mA IOL=24mA IOL=32mA 1.65 2.3 3.0 3.0 4.5 0~5.5 0.0 1.65~5.5 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 - High Level VOH Output Voltage IOH=-32mA Input Leakage Current Power Off Leakage Current Quiescent Supply Current IIN IOFF ICC VIN=5.5V or GND VIN or VOUT=5.5V VIN=5.5V or GND AC Characteristics (unless otherwise specified, Input : tr=tf=3ns) CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.8±0.15 tPLH tPHL CL=15pF, RL=1MΩ 2.5±0.2 3.3±0.3 5.0±0.5 CL=50pF, RL=500Ω Input Capacitance Power Dissipation Capacitance CIN CPD (Note) 3.3±0.3 5.0±0.5 0~5.5 3.3 5.5 MIN. 1.8 1.2 0.8 0.5 1.2 0.8 Ta=25℃ TYP. 4.4 3.0 2.2 1.8 2.9 2.3 3.0 18 23 MAX. 9.5 5.1 3.4 2.8 4.5 3.6 Ta=-40~85℃ MIN. 2.0 1.2 0.8 0.5 1.2 0.8 MAX. 10.0 5.6 3.8 3.1 5.0 4.0 ns pF pF ns UNIT Propagation delay time Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : ICC(opr)=CPD・VCC・fIN+ICC/3 2002. 5. 13 Revision No : 2 3/3