KIC7WZ126FK

SEMICONDUCT OR TECHNICAL DATA DUAL BUS BUFFER FEATURES ・Super High Speed : tPD=2.6ns(Typ.) into 50pF at VCC=5V. ・High Output Driver : ±24mA at VCC=3V. ・Power Down High Impedance inputs/outputs. ・Outputs are Overvoltage Tolerant is 3-STATE mode. ・Wide Operating Voltage Range : VCC(opr)=1.65~5.5V. D DD A KIC7WZ126FK SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B C 1 8 DIM A B C D E F G H MILLIMETERS _ 2.0 + 0.1 _ 3.1+ 0.1 _ 2.3 + 0.1 0.5 0.2+0.05/-0.04 _ 0.7+ 0.1 _ 0.12 + 0.04 0 ~ 0.1 4 5 MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Power Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/ground Current Power Dissipation Storage Temperature Range Lead Temperature (10s) SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5~7 -0.5~7 -0.5~7 -50 -50 ±50 ±100 200 -65～150 260 UNIT V V V mA mA mA mA mW ℃ ℃ Type Name F H G US8 MARKING Z126 E Logic Diagram G1 A1 G2 A2 (1) (2) (7) (5) (3) Y2 Lot No. EN (6) Y1 PIN CONNECTION(TOP VIEW) G1 1 2 3 4 8 7 6 5 VCC G2 Y1 A2 Truth Table INPUTS G L H H X : Don t Care Z : High Impedance A X L H OUTPUTS Y Z L H A1 Y2 GND 2002. 5. 13 Revision No : 0 1/4 KIC7WZ126FK Recommended Operating Conditions CHARACTERISTIC Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time Note1 : Data retention only. Note2 : Active State. SYMBOL VCC VIN VOUT Topr tr, tf Note3 : 3-STATE RATING 1.65~5.5 1.5~5.5 0~VCC 0~VCC 0~5.5 -40~85 0～20 (VCC=1.8±0.15V, 2.5±0.2V) 0～10 (VCC=3.8V±0.3V) 0～5 (VCC=5.0V±0.5V) ns/V (Note2) (Note3) (Note1) UNIT V V V ℃ ELECTRICAL CHARACTERISTICS (DC Characteristics) CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.65~1.95 MIN. 0.75× VCC Ta=25℃ TYP. 1.65 2.3 3.0 4.5 1.52 2.15 2.80 3.68 4.20 0 0 0 0 0.08 0.10 0.15 0.22 0.22 MAX. 0.25× VCC 0.3×VCC 0.1 0.1 0.1 0.1 0.24 0.30 0.40 0.55 0.55 ±0.1 ±0.5 1 1 Ta=-40~85℃ MIN. 0.75× VCC 0.7×VCC 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 MAX. 0.25× VCC 0.3×VCC 0.1 0.1 0.1 0.1 0.24 0.30 0.40 0.55 0.55 ±1 ±5 10 10 μ A μ A μ A μ A V V V UNIT High Level Input Voltage Low Level VIH 2.3~5.5 0.7×VCC VIL 1.65~1.95 2.3~5.5 1.65 IOH=-100μ A 2.3 3.0 4.5 IOH=-4mA IOH=-8mA IOH=-16mA IOH=-24mA IOH=-32mA 1.65 2.3 3.0 3.0 4.5 1.65 IOL=100μ A 2.3 3.0 4.5 IOL=4mA IOL=8mA IOL=16mA IOL=24mA IOL=32mA 1.65 2.3 3.0 3.0 4.5 0~5.5 1.65~5.5 0.0 1.65~5.5 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 - High Level VOH VIN= VIH or VIL Output Voltage Low Level VOL VIN= VIH or VIL Input Leakage Current 3-STATE Output Leakage Power Off Leakage Current Quiescent Supply Current IIN IOZ IOFF ICC VIN=5.5V or GND VIN=VIH or VIL 0≤VOUT≤5.5V VIN or VOUT=5.5V VIN=5.5V or GND 2002. 5. 13 Revision No : 0 2/4 KIC7WZ126FK Noise Characteristics CHARACTERISTIC Quiet Output Maximum Dynamic VOL Quiet Output Minimum Dynamic VOL Quiet Output Minimum Dynamic VOH Minimum HIGH Level Dynamic Input Voltage Maximum LOW Level Dynamic Input Voltage Note 1 : Characteristic guaranteed by design. SYMBOL VOLP (Note 1) VOLV (Note 1) VOHV (Note 1) VIHD (Note 1) VILD (Note 1) TEST CONDITION VCC(V) CL=50pF CL=50pF CL=50pF CL=50pF CL=50pF 5.0 5.0 5.0 5.0 5.0 Ta=-25℃ TYP. MAX. 1.0 1.0 4.0 3.5 1.5 UNIT V V V V V AC Characteristics CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.8±0.15 Propagation Delay AN to YN (Figures 1,3) tPLH tPHL CL=15pF, RD=1MΩ S1=Open 2.5±0.2 3.3±0.3 5.0±0.5 tPLH tPHL Output to Output Skew (Figures 1,3) (Note 2) tOSLH tOSHL CL=50pF, RD=500Ω S1=Open CL=50pF, RD=500Ω S1=Open CL=50pF, RD, RU=500Ω S1=GND for tPZH S1=V1 for tPZL V1=2×VCC CL=50pF, RD, RU=500Ω S1=GND for tPHZ S1=V1 for tPLZ V1=2×VCC 3.3±0.3 5.0±0.5 3.3±0.3 5.0±0.5 1.8±0.15 2.5±0.2 3.3±0.3 5.0±0.5 1.8±0.15 2.5±0.2 3.3±0.3 5.0±0.5 0 5.0 (Note 3) 3.3 5.0 MIN. 2.0 1.0 0.8 0.5 1.2 0.8 3.0 1.8 1.2 0.8 2.5 1.5 0.8 0.3 Ta=25℃ TYP. 2.5 4 10 12 MAX. 12.0 7.5 5.2 4.5 5.7 5.0 1.0 0.8 14.0 8.5 6.2 5.5 12.0 8.0 5.7 4.7 Ta=-40~85℃ MIN. 2.0 1.0 0.8 0.5 1.2 0.8 3.0 1.8 1.2 0.8 2.5 1.5 0.8 0.3 MAX. 13.0 8.0 5.5 4.8 6.0 5.3 1.0 0.8 15.0 9.0 6.5 5.8 13.0 8.5 6.0 5.0 pF pF pF ns ns ns ns UNIT ns Output Enable Time (Figures 1,3) tPZL tPZH Output Disable Time (Figures 1,3) tPLZ tPHZ Input Capacitance Output Capacitance Power Dissipation Capacitance (Figure 2) CIN COUT CPD Note 2 : Characteristic guaranteed by design. tOSLH=|tPLHmax-tPLHmin| ; tOSHL=|tPHLmax-tPHLmin|. Note 3 : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic operating current by the exprssion : ICCD=CPD・VCC・fIN+ICC 2002. 5. 13 Revision No : 0 3/4 KIC7WZ126FK AC Loading and Waveforms t r =3ns t f =3ns 90% 50% 10% t PHL VOH OUTPUT C L includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns FIGURE 1. AC Test Circuit t r =3ns t f =3ns 90% 50% tw t PZL OE OUTPUT t PZH 50% 50% t PHZ 10% t PLZ VTRI OUTPUT VOL +0.3V VOL V OH VOH - 0.3V VTRI FIGURE 3. AC Waveforms VCC 50% 50% V OL VCC V CC V IN OPEN GND RU OUTPUT INPUT OE INPUT INPUT CL tw t PLH GND RD V CC OE INPUT GND A INPUT Input=AC Waveform ; t r =tf =1.8ns; PRR=10MHz ; Duty Cycle=50% FIGURE 2. I CCD Test Circuit OUTPUT 2002. 5. 13 Revision No : 0 4/4