KIC7WZ34FK

SEMICONDUCTOR TECHNICAL DATA TRIPLE NON INVERTER FEATURES High output drive : 24mA(min.) @VCC=3V. Super high speed operation : tpd 2.4ns(typ.) @VCC=5V, 50pF. Operation voltage range : VCC(opr)=1.65~5.5V. Latch-up performance : ESD performance : 500mA or more 1 KIC7WZ34FK SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B C 8 200V or more (EIAJ) 2000V or more (MIL) D DD A DIM A B C D E F G H MILLIMETERS _ 2.0 + 0.1 _ 3.1+ 0.1 _ 2.3 + 0.1 0.5 0.2+0.05/-0.04 _ 0.7+ 0.1 _ 0.12 + 0.04 0 ~ 0.1 Power down protection is provided on all inputs and outputs. 4 5 MARKING F H G Type Name Z34 Lot No. US8 MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Power Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/ground Current Power Dissipation Storage Temperature Range Lead Temperature (10s) ) SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5~6 -0.5~6 -0.5~6 -20 -20 50 50 200 -65 150 260 UNIT V V V mA mA mA mA mW PIN CONNECTION(TOP VIEW) 1A 1 3Y 2 2A 3 GND 4 8 V CC 7 1Y 6 3A 5 2Y 2002. 3. 7 Revision No : 1 E 1/3 KIC7WZ34FK Truth Table A L H Y L H IN A Logic Diagram 1 OUT Y Recommended Operating Conditions CHARACTERISTIC Supply Voltage Input Voltage Output Voltage Operating Temperature SYMBOL VCC VIN VOUT Topr RATING 1.65~5.5 V 1.5~5.5 0~5.5 0~5.5 0~VCC -40~85 0~20 (VCC=1.8V 0.15V, 2.5V Input Rise and Fall Time dt/dv 0.2V) ns/V 0~10 (VCC=3.3V 0.3V) 0~5 (VCC=5.5V 0.5V) Note1 : Data retention only. Note2 : VCC=0V. Note3 : High or low state (Note2) (Note3) V (Note1) V UNIT 2002. 3. 7 Revision No : 1 2/3 KIC7WZ34FK ELECTRICAL CHARACTERISTICS DC Characteristics TEST CONDITION CHARACTERISTIC SYMBOL VCC(V) High Level Input Voltage Low Level VIL VIH 1.65~1.95 MIN. 0.75 VCC Ta=25 TYP. 1.65 2.3 3.0 4.5 1.52 2.14 2.75 2.62 4.13 0 0 0 0 0.08 0.1 0.16 0.24 0.25 1 1 MAX. 0.25 VCC 0.3 VCC 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 1 Ta=-40~85 MIN. 0.75 VCC 0.7 VCC 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 MAX. 0.25 VCC 0.3 VCC 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 10 10 10 A A A V V V UNIT 2.3~5.5 0.7 VCC 1.65~1.95 2.3~5.5 1.65 IOH=-100 A VIN= VIH or VIL 2.3 3.0 4.5 IOH=-4mA IOH=-8mA IOH=-16mA IOH=-24mA 1.65 2.3 3.0 3.0 4.5 1.65 IOH=100 A 2.3 3.0 4.5 Low Level VOL VIN=VIL IOH=4mA IOH=8mA IOH=16mA IOH=24mA IOH=32mA 1.65 2.3 3.0 3.0 4.5 0~5.5 0.0 1.65~5.5 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 - High Level VOH Output Voltage IOH=-32mA Input Leakage Current Power Off Leakage Current Quiescent Supply Current IIN IOFF ICC VIN=5.5V or GND VIN or VOUT=5.5V VIN=5.5V or GND AC Characteristics (unless otherwise specified, Input : tr=tf=3ns) TEST CONDITION CHARACTERISTIC SYMBOL VCC(V) 1.8 tPLH tPHL CL=15pF, RL=1M 0.15 2.5 0.2 3.3 0.3 5.0 0.5 CL=50pF, RL=500 Input Capacitance Power Dissipation Capacitance CIN CPD (Note) 3.3 0.3 5.0 0.5 0~5.5 3.3 5.5 MIN. 2.0 1.0 0.8 0.5 1.2 0.8 Ta=25 TYP. 4.4 3.0 2.3 1.8 3.0 2.4 3.0 24 34 MAX. 9.5 5.2 3.6 2.9 4.6 3.8 Ta=-40~85 MIN. 2.0 1.0 0.8 0.5 1.2 0.8 MAX. 10.0 5.8 4.0 3.2 5.1 4.2 ns pF pF ns UNIT Propagation delay time Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : ICC(opr)=CPD VCC fIN+ICC/3 2002. 3. 7 Revision No : 1 3/3