KIC7WZ86FK

SEMICONDUCT OR TECHNICAL DATA 2 INPUT EXCLUSIVE OR GATE FEATURES ・High output drive : ±24mA(min.) @VCC=3V. ・Super high speed operation : tpd 2.9ns(typ.) @VCC=5V, 50pF. ・Operation voltage range : VCC(opr)=1.65~5.5V. ・Latch-up performance : ±200V or more (EIAJ) : ±2000V or more (MIL) ・Power down protection is provided on all inputs and outputs. A D DD KIC7WZ86FK SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B C 1 8 DIM A B C D E F G H MILLIMETERS _ 2.0 + 0.1 _ 3.1+ 0.1 _ 2.3 + 0.1 0.5 0.2+0.05/-0.04 _ 0.7+ 0.1 _ 0.12 + 0.04 0 ~ 0.1 4 5 MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Power Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/ground Current Power Dissipation Storage Temperature Range Lead Temperature (10s) SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5~7 -0.5~7 -0.5~7 -50 -50 ±50 ±100 200 -55～150 -55～150 UNIT V V V mA mA mA mA mW ℃ ℃ Type Name F H G US8 MARKING Z86 E Lot No. Truth Table A L L H H B L H L H Y L H H L 1A 1 8 VCC 7 1Y 6 2B 5 2A PIN CONNECTION(TOP VIEW) Logic Diagram 1B 2 IN1A IN1B IN2A IN2B =1 OUT1Y 2Y 3 GND 4 OUT2Y 2002. 5. 13 Revision No : 0 1/3 KIC7WZ86FK Recommended Operating Conditions CHARACTERISTIC Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time Note1 : Data retention only. Note2 : VCC=0V. SYMBOL VCC VIN VOUT Topr dt/dv Note3 : High or low state RATING 1.65~5.5 1.5~5.5 0~5.5 0~5.5 0~VCC -40~85 0~20 (VCC=1.8V±0.15V, 2.5V±0.2V) 0~10 (VCC=3.3V±0.3V) 0~5 (VCC=5.5V±0.5V) ns/V (Note2) (Note3) (Note1) UNIT V V V ℃ ELECTRICAL CHARACTERISTICS DC Characteristics CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.65~1.95 MIN. 0.75× VCC Ta=25℃ TYP. 1.65 2.3 3.0 4.5 1.52 2.15 2.80 2.68 4.20 0 0 0 0 0.08 0.10 0.15 0.22 0.22 MAX. 0.25× VCC 0.3×VCC 0.1 0.1 0.1 0.1 0.24 0.30 0.40 0.55 0.55 ±1 1 1 Ta=-40~85℃ MIN. 0.75× VCC 0.7×VCC 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 MAX. 0.25× VCC 0.3×VCC 0.1 0.1 0.1 0.1 0.24 0.30 0.40 0.55 0.55 ±1 10 10 μ A μ A μ A V V V UNIT High Level Input Voltage Low Level VIH 2.3~5.5 0.7×VCC VIL 1.65~1.95 2.3~5.5 1.65 IOH=-100μ A 2.3 3.0 4.5 IOH=-4mA IOH=-8mA IOH=-16mA IOH=-24mA IOH=-32mA 1.65 2.3 3.0 3.0 4.5 1.65 IOL=100μ A 2.3 3.0 4.5 IOL=4mA IOL=8mA IOL=16mA IOL=24mA IOL=32mA 1.65 2.3 3.0 3.0 4.5 0~5.5 0.0 1.65~5.5 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 - High Level VOH VIN= VIH or VIL Output Voltage Low Level VOL VIN= VIH or VIL Input Leakage Current Power Off Leakage Current Quiescent Supply Current IIN IOFF ICC VIN=5.5V or GND VIN or VOUT=5.5V VIN=5.5V or GND 2002. 5. 13 Revision No : 0 2/3 KIC7WZ86FK AC Characteristics (unless otherwise specified, Input : tr=tf=3ns) CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.8±0.15 tPLH tPHL CL=15pF, RL=1MΩ 2.5±0.2 3.3±0.3 5.0±0.5 CL=50pF, RL=500Ω Input Capacitance Power Dissipation Capacitance CIN CPD (Note) 3.3±0.3 5.0±0.5 0~5.5 3.3 5.5 MIN. 2.0 1.0 0.8 0.5 1.2 0.8 Ta=25℃ TYP. 6.7 4.1 3.0 2.2 3.8 2.9 2.5 15 19 MAX. 12.5 7.0 4.8 3.5 5.4 4.2 Ta=-40~85℃ MIN. 2.0 1.2 0.8 0.5 1.2 1.0 MAX. 13.0 7.5 5.2 3.8 5.9 4.6 ns pF pF ns UNIT Propagation delay time Note : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic operating current by the exprssion : ICCD=CPD・VCC・fIN+ICC AC Loading and Waveforms VCC INPUT CL RL OUTPUT t r =3ns t f =3ns 90% 50% 10% t PLH VOH VCC INPUT CL includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns tw t PHL GND FIGURE 1. AC Test Circuit Out of Phase OUTPUT VCC A In Phase OUTPUT INPUT 50% 50% t PLH 50% 50% t PHL VOL VOH VOL FIGURE 3. AC Waveforms Input=AC Waveform ; t r =tf =1.8ns PRR=10MHz ; Duty Cycle=50% FIGURE 2. I CCD Test Circuit 2002. 5. 13 Revision No : 0 3/3