KMA3D0N20SA

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. KMA3D0N20SA N-Ch Trench MOSFET L E B L FEATURES A H 2 G 1 3 VDSS=20V, ID=3A Drain-Source ON Resistance RDS(ON)=60m (Max.) @ VGS=4.5V RDS(ON)=120m (Max.) @ VGS=2.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range ) SYMBOL VDSS VGSS ID IDP IS PD 0.8 Tj Tstg RthJA 150 -55 150 100 /W N-Ch 20 10 3 A 12 1.25 1.25 W A UNIT V V KNB Thermal Resistance, Junction to Ambient Note : Surface Mounted on FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) D 3 3 2 1 2 1 G S 2007. 4. 17 Revision No : 0 J D 1/5 KMA3D0N20SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width