KMA3D7P20SA

SEMICONDUCTOR TECHNICAL DATA General Description It’s mainly suitable for use as a load switch. KMA3D7P20SA P-Ch Trench MOSFET L E B L FEATURES A Drain to Source on-state Resistance RDS(ON)=76m (Max.) @ VGS=-4.5V RDS(ON)=112m (Max.) @ VGS=-2.5V G VDSS=-20V, ID=-3.7A 2 H 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N M MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current ) SYMBOL VDSS VGSS P-Ch -20 12 -3.7 A -16 -16 1.25 W 0.6 150 -55 150 100 /W A UNIT V V K SOT-23 DC@Ta=25℃ Pulsed (Note1) (Note1) ID IDP IS Drain to Source Diode Forward Current Drain Power Dissipation Ta=25℃ Ta=100℃ (Note1) (Note1) PD Tj Tstg RthJA KNH Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient (Note1) Note1) Surface Mounted on 1 1 FR4 Board, t 5sec. PIN CONNECTION (TOP VIEW) D 3 3 2 1 G S 2 1 2009. 6. 10 Revision No : 1 J D 1/4 KMA3D7P20SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Source to Drain Diode Ratings Source to Drain Forward Voltage Note2) Pulse Test : Pulse width