KMA7D0NP30Q

SEMICONDUCTOR TECHNICAL DATA General Description Switching regulator and DC-DC converter applications. It s mainly suitable for power management in notebook, portable equipment and battery powered systems. KMA7D0NP30Q N and P-CH Trench MOSFET A FEATURES N-Channel : VDSS=30V, ID=7A. : RDS(ON)=17m (Typ.) @ VGS=10V. : RDS(ON)=22m (Typ.) @ VGS=4.5V. 8 5 B1 B2 T L 1 4 P-Channel : VDSS=-30V, ID=-5.5A. : RDS(ON)=35m (Typ.) @ VGS=-10V. : RDS(ON)=51m (Typ.) @ VGS=-4.5V. Super high dense cell design for extermely low RDS(ON). Reliable and rugged. D P G H DIM A B1 B2 D G H L P T MILLIMETERS _ 4.9 + 0.1 _ 3.9 + 0.1 _ 6.0 + 0.2 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.5 + 0.2 _ 0.75 + 0.2 1.27 0.5 MAX FLP-8 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Curren Pulsed Drain Power Dissipation Ta=25 Ta=100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case ) SYMBOL VDSS VGSS ID * IDP PD * Tj Tstg RthJA * N-Ch 30 20 7 28 2 W 0.8 150 -55 150 62.5 /W P-Ch -30 20 -5.5 A -20 UNIT V V * : Surface Mounted on FR4 Board, t 10sec. D1 D1 S2 PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 S1 G1 G2 2 7 3 6 4 5 D2 D2 N-Channel MOSFET P-Channel MOSFET 2005. 10. 25 Revision No : 3 1/8 KMA7D0NP30Q ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS N-Ch ID= 250 A, VGS=0V VDS=24V, VGS=0V VDS=-24V, VGS=0V VDS=VGS, ID= VGS= 250 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 51 0.7 -0.7 78 1.3 V -1.3 22 35 30 56 m -1 -1.5 17 -2 100 24 nA P-Ch N-Ch P-Ch N-Ch 30 -30 1 1.5 V 1 -1 2 V A Drain Cut-off Current IDSS Gate Threshold Voltage Vth IGSS Gate Leakage Current 20V, VDS=0V VGS=10V, ID=7A Drain-Source ON Resistance RDS(ON)(Note 1) VGS=4.5V, ID=5A VGS=-10V, ID=-5.5A VGS=-4.5V, ID=-4A Source-Drain Diode Forward Voltage VSD (Note 1) IDR=2A, VGS=0V IDR=-2.3A, VGS=0V Dynamic (Note 2) Total Gate Charge Qg N-Channel VDS=15V, ID=7A VGS=10V P-Channel VDS=-15V, ID=-5.5A VGS=-10V N-Ch P-Ch N-Ch P-Ch N-Ch (Fig.1) P-Ch N-Ch N-Channel VDD=15V, ID=2A VIN=10V, RG=6 RL=7.5 P-Channel VDD=-15V, ID=-2A VIN=-10V, RG=6 RL=7.5 P-Ch N-Ch P-Ch N-Ch P-Ch (Fig.2) N-Ch P-Ch N-Channel VDS=25V, VGS=0V f=1.0MHz P-Channel VDS=-25V, VGS=0V f=1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 19 33 1.6 5 3.6 4 11 12 17 15 36 35 20 15 835 950 15 110 145 160 28 43 nC 20 24 28 29 ns Turn-off Delay time td(off) 62 60 36 30 pF - Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) Turn-on Rise time tr Turn-off Fall time tf Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Note 1) Pulse test : Pulse width 300 Coss , duty cycle 2% Note 2) Guaranteed by design, not subject to production testing. 2005. 10. 25 Revision No : 3 2/8 KMA7D0NP30Q N-Channel ID - VDS 30 30 VGS = 4, 5, 6, 7, 8, 9, 10V ID - VGS 20 15 10 5 0 0 1 2 VGS=2V VGS=3V Drain Current ID (A) Drain Current ID (A) 25 25 20 15 10 Tj= -55 C Tj=125 C 5 0 Tj=25 C 3 4 5 0 1 2 3 4 5 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Vth - Tj Normalized Threshold Voltage Vth (V) 1.6 40 RDS(ON) - ID On - Resistance RDS(ON) (mΩ) IDS= 250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 35 30 25 20 15 10 5 0 5 10 15 20 25 30 VGS = 10V VGS = 4.5V Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD 30 1.8 RDS(ON) - Tj VGS = 10V IDS = 7A Reverse Drain Current IS (A) 10 Tj=150 C Normalized On Resistance 1.2 1.4 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 1 Tj=25 C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 -50 -25 0 25 50 75 100 125 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2005. 10. 25 Revision No : 3 3/8 KMA7D0NP30Q C - VDS 1400 10 Qg- VGS Gate - Source Voltage VGS (V) Frequency=1MHz VDS=15V 1200 Capacitance (pF) 8 6 4 2 0 IDS=7A 1000 800 600 400 200 Crss Ciss Coss 0 0 10 20 30 0 4 8 12 16 20 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area 102 Rth Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 Drain Current ID (A) 101 R DS (O N) t mi Li 300 µs 1ms 10ms 10-1 0.1 0.05 0.02 0.01 100 100ms 1s 10-1 10-2 g Sin le Pu lse DC Ta= 25 C 10-2 10-2 10-1 100 101 102 10-3 10-4 Mounted on FR4 Board RthJA : 62.5 C /W 10-3 10-2 10-1 100 101 Drain - Source Voltage VDS (V) Square Wave Pulse Duration (sec) 2005. 10. 25 Revision No : 3 4/8 KMA7D0NP30Q P-Channel ID - VDS -24 VGS = -5,-6,-7,-8,-9,-10V ID - VGS -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 -16 -12 -8 VGS=-3V Drain Current ID (A) Drain Current ID (A) -20 VGS=-4V Tj=125 C Tj= -55 C Tj=25 C -4 0 0 -2 -4 -6 -8 -10 -1 -2 -3 -4 -5 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Vth - Tj Normalized Threshold Voltage Vth (V) -1.75 -1.50 -1.25 -1.00 -0.75 -0.50 -0.25 0.00 -75 -50 -25 0 25 50 75 100 125 150 RDS(ON) - ID 80 On - Resistance RDS(ON) (mΩ) IDS= -250µA 70 60 50 40 30 20 10 0 -4 -8 -12 -16 -20 -24 VGS=-10V VGS=-4.5V Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD 1.8 RDS(ON) - Tj VGS = -10V IDS = -5.5A Reverse Drain Current IS (A) -10 Normalized On Resistance -1.2 -1.4 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 Tj=150 C Tj=25 C -1 -0.1 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 -25 0 25 50 75 100 125 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2005. 10. 25 Revision No : 3 5/8 KMA7D0NP30Q C - VDS 1500 Frequency=1MHz Qg- VGS -10 Gate - Source Voltage VGS (V) -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 1250 VDS = -15V IDS = -5.5A Capacitance (pF) 1000 750 500 250 0 0 Coss Crss Ciss -10 -20 -30 5 10 15 20 25 30 35 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area -100 Rth Normalized Transient Thermal Resistance 100 Duty = 0.5 0.2 Drain Current ID (A) -10 R DS N (O ) it Lim 1ms 10ms 100ms 1s 10-1 0.1 0.05 0.02 0.01 -1 -0.1 10-2 g Sin le Pu lse DC -0.01 -0.01 Ta= 25 C -0.1 -1 -10 -100 10-3 Mounted on FR4 Board RthJA : 62.5 C /W 10-4 10-3 10-2 10-1 100 101 Drain - Source Voltage VDS (V) Square Wave Pulse Duration (sec) 2005. 10. 25 Revision No : 3 6/8 KMA7D0NP30Q N -Channel Fig. 1 Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig. 2 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS 10% td(on) tr ton td(off) VGS tf toff 2005. 10. 25 Revision No : 3 7/8 KMA7D0NP30Q P -Channel Fig. 1 Gate Charge VGS -10 V Schottky Diode ID 0.5 VDSS 1.0 mA ID VDS VGS Q Qgs Qgd Qg Fig. 2 Resistive Load Switching RL td(on) ton tr td(off) toff tf 0.5 VDSS 6Ω VDS VGS 10% -4.5 V VGS VDS 90% 2005. 10. 25 Revision No : 3 8/8