KMB010P30QA

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. D KMB010P30QA P-Ch Trench MOSFET H T P G L FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Surface Mounted on FR4 Board Unless otherwise noted) SYMBOL PATING VDSS VGSS ID* IDP IS P D* Tj Tstg RthJA* -30 25 -10 -50 -1.7 2.0 150 -55~150 62.5 /W UNIT V V A A A W DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 KMB010P 30QA 709 PIN CONNECTION (TOP VIEW) S S S G 1 8 D D D D 1 2 3 8 7 6 5 2 7 3 6 4 4 5 2007. 6. 29 Revision No : 1 1/4 KMB010P30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note 1. Pulse Test : Pulse width 10 , Duty cycle 1% VSDF* VGS=0V, IDR=-1.7A, -0.73 -1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tr* VDD=-15V, VGS=-10V RL=1.25 , RG=6 VDS=-15V, VGS=-10V, ID=-10A VDS=-15V, VGS=0V, f=1MHz 2530 635 445 44.6 7.7 11.5 10.2 6.3 22.5 10.6 ns nC pF BVDSS IDSS IGSS Vth RDS(ON)* VGS=-4.5V, ID=-8A ID(ON)* Gfs* VDS=-5V, VGS=-10V VDS=-15V, ID=-10A -30 20 14 28 A S VGS=0V, IDS=-250 A VDS=-24V, VGS=0V VGS= 25V, VDS=0V -30 -1.3 -1.9 12 -1 100 -2.5 20 m V A nA V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=-250 A VGS=-10V, ID=-10A 2007. 6. 29 Revision No : 1 2/2 KMB010P30QA Fig1. ID - VDS 25 VGS=10,9,8,7,6,5,4V Fig2. ID - VGS 25 Drain Current ID (A) 15 10 5 0 0 2 4 6 8 VGS=3.0V Drain Current ID (A) 20 20 15 10 125 C 5 0 25 C -55 C 10 12 0 0.5 1 1.5 2 2.5 3 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. C - VDS 4200 1.8 VGS=-20V ID=-10A Fig4. RDS(ON) - Tj On-Resistance RDS(ON) (Ohms) 3500 1.6 1.4 1.2 1.0 0.8 0.6 -55 Capacitance (pF) Ciss 2800 2100 1400 700 0 0 5 10 15 20 25 30 Coss Crss -25 0 25 50 75 100 125 Drain-Source Volatage VDS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Reverse Source-Drain Current IDR (A) Normalized Gate Source Threshold Voltage Vth 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 VGS=VDS ID=-250µA Fig 6. IDR - VSDF 20 VGS=0V 10 1 0.4 0.6 0.7 0.9 1.1 1.3 Junction Temperature Tj ( C ) Source-Drain Forword Voltage VSDF (V) 2007. 6. 29 Revision No : 1 3/4 KMB010P30QA Fig7. VGS - Qg 10 Fig8. Safe Operation Area 102 Gate to Source Voltage VGS (V) VDS=-15V Drain Current ID (A) 8 6 4 2 0 0 ID=-10A 101 1ms 100 Operation in this area is limited by RDS(ON) 10ms 100ms 1s 10s DC 10-1 VGS= 10V SINGLE PULSE 8 16 24 32 40 48 56 64 10-2 10-1 100 101 102 103 Total Gate Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty Cycle = 0.5 PDM t1 0.1 0.05 0.02 Single Pluse t2 t1 0.2 10-1 1. Duty Cycle, D = t2 2. Per Unit Base = RθJA= 62.5 C/W 10-2 10-1 100 101 102 103 10-2 10-4 10-3 Square Wave Pulse Duration (sec) 2007. 6. 29 Revision No : 1 4/4